|
|
| Characterization of Separation-by-Implanted-Oxygen
Wafers with Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H.
Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi
and M. Koumaru |
Jpn. J. Appl. Phys. 32, 3682-3686
|
| Positron Annihilation in Vitreous Silica Glasses |
A. Uedono and S. Tanigawa |
Jpn. J. Appl. Phys. 32, 2687-2691
|
| Study of Point Defects in Bulk ZnSe Grown by
Nonstoichiometric Annealing |
K. Terashima, E. Tokizaki, A. Uedono and Y.
Ujihira |
Jpn. J. Appl. Phys. 32,
736-740 | | |
陽電子寿命-ドップラー拡がり相関測定によるポジトロニウムと分子の反応の解析
| 上殿明良，鈴木良一，谷川庄一郎 |
Radioisotopes 41, 611-617 |
|
| Characterization of Diamond Films by Means of a
Pulsed Positron Beam |
R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, M.
Chiwaki, T. Yamazaki, A. Uedono, S. Tanigawa and H.
Funamoto |
Jpn. J. Appl. Phys. 31, 2237-2240
|
| Characterization of Grown-in Dislocations in
Benzophenone Single Crystals by X-Ray Topography |
M. Tachibana, S. Motomura, A. Uedono, Q. Tang and K.
Kojima |
Jpn. J. Appl. Phys. 31, 2202-2205
|
| The Depth Profiles of Ion Implantation Induced
Vacancy-Type Defects Probed by a Monoenergetic Positron
Beam |
A. Uedono, L. Wei, S. Tanigawa, J. Sugiura, M.
Ogasawara and M. Tamura |
Radiation
Effects and Defects in Solids 124,
31-41 | | |
| Defects Introduced by MeV-Energy Ion Implantation
into Si Probed by a Monoenergetic Positron Beam |
A. Uedono, L. Wei, C. Dosho, H. Kondo, S. Tanigawa
and M. Tamura |
Jpn. J. Appl. Phys. 30, 1597-1603
|
| Release Processes of He Implanted in Cu and Ni
Studied by a Monoenergetic Positron Beam |
A. Uedono, S. Tanigawa and H. Sakairi |
J. Nucl. Mater. 184, 191-196 |
| Defect Production in Phosphorus Ion-Implanted
SiO2(43 nm)/Si Studied by a Variable-Energy
Positron Beam |
A. Uedono, L. Wei, C. Dosho, H. Kondo, S. Tanigawa,
J. Sugiura and M. Ogasawara |
Jpn. J. Appl. Phys. 30, 201-206
| | | |
