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| Defects in Ion Implanted 3C-SiC Probed by a
Monoenergetic Positron Beam |
A. Uedono, H. Itoh, T. Ohshima, Y. Aoki, M.
Yoshikawa, I. Nashiyama, H. Okumura, S. Yoshida, T.
Moriya, T. Kawano and S. Tanigawa |
Jpn. J. Appl. Phys. 35, 5986-5900
|
| Annihilation of Positronium in α-SiO2
Investigated by Combined Angular Correlation and
Lifetime Measurements |
S. Dannefaer, T. Friessnegg, D. Kerr, A. Uedono, X.
Li and S. Tanigawa |
Phys.
Rev. B 54, 15051-15055 |
| 陽電子消滅による高分子のガラス転移と緩和現象の検出 |
上殿明良，谷川庄一郎 |
高分子論文集 53, 563-574 |
| Positron annihilation in
germanium in thermal equilibrium at high temperture |
A. Uedono, T. Moriya,
N.Komuro, T. Kawano, S. Tanigawa, and A. Ikari |
Jpn. J. Appl. Phys. 35,
4599-4605 |
| Study of Relaxation Processes in Polyethylene and
Polystyrene by Positron Annihilation |
A. Uedono, T. Kawano, S. Tanigawa, M. Ban, M. Kyoto
and T. Uozumi |
J.
Polym. Sci. B 34, 2145-2151 |
| Free Volumes in Nematic and Smectic
Liquid-Crystalline Polymers Probed by Positron
Annihilation |
R. Sadamoto, A. Uedono, T. Kawano, S. Tanigawa, Y.
Kosaka, T. Uryu |
J.
Polym. Sci. B 34, 1659-1664 |
| Thermal Equilibrium Defects in Anthracene Probed by
Positron Annihilation |
A. Uedono, M. Tachibana, M. Shimizu, M. Satoh, K.
Kojima, S. Ishibashi, T. Kawano and S. Tanigawa |
Jpn. J. Appl. Phys. 35, 3623-3629
|
| Free Volumes in Polystyrene Probed by Positron
Annihilation |
M. Ban, M. Kyoto, A. Uedono, T. Kawano and S.
Tanigawa |
J.
Polym. Sci. B 34, 1189-1195 |
| Effects of Recoil-Implanted Oxygen on Depth Profiles
of Defects and Annealing Processes in
P+-Implanted Si Studied Using Monoenergetic
Positron Beams |
A. Uedono, T. Kitano, M. Watanabe, T. Moriya, T.
Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T.
Mikado |
Jpn. J. Appl. Phys. 35, 2000-2007
| | |
| A Positron Age-Momentum Correlation Spectrometer for
the Study of Open Spaces in Amorphous Polymers |
A. Uedono, T. Kawano, S. Tanigawa, M. Ban and M.
Kyoto |
Nucl.
Inst. & Methods B 103, 511-516 |
| Formation of Oxygen-Related Defects Enhanced by
Fluorine in BF2+-Implanted Si
Studied by Monoenergetic Positron Beam |
A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R.
Nagai and K. Umeda |
Jpn. J. Appl. Phys. 34, 6293-6297
|
| Characterization of Diamond Single Crystals by Means
of Double-Crystal X-ray Diffraction and Positron
Annihilation |
S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono and
S. Tanigawa |
Appl.
Phys. A 61, 331-333 |
| Defects in TiN Films Probed by Monoenergetic
Positron Beam |
A. Uedono, S. Nanao, T. Moriya, S. Tanigawa, R.
Suzuki, T. Ohdaira, T. Mikado and S. Ishibashi |
Jpn. J. Appl. Phys. 34, 5711-5716
|
| Characterization of Metal/GaAs Interfaces by
Monoenergetic Positron Beam |
A. Uedono, S. Fujii, T. Moriya, T. Kawano and S.
Tanigawa |
Jpn. J. Appl. Phys. 34, 5505-5509
|
| Positronium Annihilation in SiO2/Si
Structure at Low Temperature |
A. Uedono, T. Moriya, S. Tanigawa, T. Kawano and Y.
Ohji |
J. Appl. Phys. 78, 3269-3273 |
| Study of Various Types of Diamonds by Measurements
of Double Crystal X-Ray Diffraction and Positron
Annihilation |
S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono and
S. Tanigawa |
J. Appl. Phys. 78, 1510-1513 |
| Thermal Variation of Free-Volumes Size Distribution
in Polypropylenes Probed by Positron Annihilation
Lifetime Technique |
Y. Ohko, A. Uedono and Y. Ujihira |
J. Polym. Sci. B 33, 1183-1190 |
| Positron Trapping by Defects in Vitreous Silica at
Low Temperature |
A. Uedono, T. Kawano, S. Tanigawa, A. Urano, M.
Kyoto and H. Itoh |
J. Phys. Condens. Matter 7, 5139-5149
|
| Free Volumes in Liquid-Crystalline Main-Chain
Polymer Probed by Positron Annihilation |
A. Uedono, R. Sadamoto, T. Kawano, S. Tanigawa and
T. Uryu |
J. Polym. Sci. B 33, 891-897 |
| Vacancy-Type Defects in Ion-Implanted Diamonds
Probed by Monoenergetic Positron Beams |
A. Uedono, T. Kawano, S. Tanigawa, R. Suzuki, T.
Ohdaira, T. Mikado, S. Fujii and S. Shikata |
Jpn. J. Appl. Phys. 34, 1772-1777
| | |
| Defects in Heavily Phosphorus-Doped Si Epitaxial
Films Probed by Monoenergetic Positron Beam |
A. Uedono, S. Tanigawa, R. Suzuki, H. Ohgaki and T.
Mikado |
Jpn. J. Appl. Phys. 33, 6286-6290
|
| Application of Positron Age-Momentum Correlation
Measurement to the Study of Defects in Electron
Irradiated Synthetic Silica Glass |
S. Watauchi, A. Uedono and Y. Ujihira |
J. Appl. Phys. 76, 4553-4559 |
| Defects in Czochralski-Grown Silicon Crystals
Investigated by Positron Annihilation |
A. Ikari, K. Kawakami, H. Haga, A. Uedono, L. Wei,
T. Kawano and S. Tanigawa |
Jpn. J. Appl. Phys. 33, 5585-5589
|
| Defects in Electron Irradiated Vitreous
SiO2 Probed by Positron Annihilation |
A. Uedono, T. Kawano, S. Tanigawa and H. Itoh |
J. Phys. Condens. Matter 6, 8669-8677
|
| 陽電子消滅による電子線照射石英ガラスの欠陥の検出
| 綿打敏司，上殿明良，依田修，氏平祐輔 |
日本化学会会誌 505-511 |
| Defects in SiO2/Si Structures Probed by
Using a Monoenergetic Positron Beam |
A. Uedono, L. Wei, S. Tanigawa and Y. Ohji |
Jpn. J. Appl. Phys. 33, 3330-3334
|
| Positronium Formation in SiO2 Films Grown on Si
Substrates Studied by Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H.
Ohgaki, T. Mikado and Y. Ohji |
J. Appl. Phys. 75, 3822-3828 |
| Oxygen Clusters in Quenched Czochralski-Si Studied
by Infrared Spectroscopy and Positron Annihilation |
A. Ikari, H. Haga, A. Uedono, Y. Ujihira and O.
Yoda |
Jpn. J. Appl. Phys. 33, 1723-1727
|
| Vacancy-Type Defects in Be-implanted InP |
L. Wei, A. Uedono, S. Tanigawa, K. Wada and H.
Nakanishi |
Jpn. J. Appl. Phys. 33, 33-36 |
| Positron Annihilation in Proton Irradiated
Czochralski-Grown Si |
A. Uedono, Y.K. Cho, S. Tanigawa and A. Ikari |
Jpn. J. Appl. Phys. 33, 1-5 |
| SiO2 films Deposited on Si Substrates by
Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H.
Ohgaki, T. Mikado and K. Fujino |
J. Appl. Phys. 75, 216-222 |
| Positron Annihilation in a Metal/Oxide/Semiconductor
Studied by Using a Pulsed Monoenergetic Positron Beam |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H.
Ohgaki, T. Mikado and Y. Ohji |
J.
Appl. Phys. 74, 7251-7256
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