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Journal/Vol. |
Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams
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A. Uedono, Y. Mizushima, Y. Kim, T. Nakamura, T. Ohba, N. Yoshihara, N. Oshima, and R, Suzuki
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J. Appl. Phys. 116, 134501(1-5)
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Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration
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Y. Mizushima, Y. Kim, T. Nakamura, R. Sugie, H. Hashimoto, A. Uedono, and T. Ohba
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pn. J. Appl. Phys. 53, 05GE04(1-6)
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Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing
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Y. Mizushima, Y. Kim, T. Nakamura, R. Sugie, H. Hashimoto, A. Uedono, and T. Ohba,
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Nucl. Inst. Meth. B 321, 54-58 .
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Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing
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A. Sagara, M. Hiraiwa, A. Uedono, N. Oshima, R. Suzuki, and S. Shibata,
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Nucl. Inst. Meth. B 321, 54-58 .
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Leaching properties of chromate-containing epoxy films using radiotracers, PALS and SEM
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S. Sellaiyan, A. E. Hughes, S. V. Smith, A. Uedono, J. Sullivan, and S. Buckman
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Prog. Organic Coat. 77, 257-267 .
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Auther |
Journal/Vol. |
Characterization of polyethylene terephthalate ?lms coated with thin AlxSi1?xOy layers using monoenergetic positron beams
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A. Uedono, S. Murakami, K. Inagaki, K. Iseki, N. Oshima, and R. Suzuki,
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Thin solid films 552, 82-85 .
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Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects
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H. Shimizu, S. Nagano, A. Uedono, N. Tajima, T. Momose, and Y. Shimogaki
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Sci. Tech. Adv. Mat. 44, 055005(1-5)
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Vacancy-type defects in InxGa1?xN grown on GaN templates probed using monoenergetic positron beams
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A. Uedono, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac’h, L. Sang, S. Ishibashi, N. Oshima, R. Suzuki, and M. Sumiya
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J. Appl. Phys. 114, 184504(1-8)
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Characterization of porous structures in advanced low-k films with thin TaN layers using monoenergetic positron beams
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A. Uedono, P. Verdonck, A. Delabie, J. Swerts, T. Witters, T. Conard, M. R. Baklanov, S. Van Elshocht, N. Oshima, and R. Suzuki
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Jpn. J. Appl. Phys. 52, 106501(1-5)
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Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams
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A. Uedono, I. Yonenaga, T. Watanabe, S. Kimura, N. Oshima, R. Suzuki, S. Ishibashi, and Y. Ohno
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J. Appl. Phys. 114, 084506(1-6)
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Vacancy reactions near the interface between electroplated Cu and barrier metal layers studied by monoenergetic positron beams
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A. Uedono, T. Kirimura, C. J. Wilson, K. Croes, S. Demuynck, Z. T?kei, N. Oshima, and R. Suzuki
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J. Appl. Phys. 114, 074510(1-6)
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The Effects of Plasma Treatments and Subsequent Atomic Layer Deposition on the Pore Structure of a k=2.0 Low-k Material
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P. Verdonck, A. Maheshwari, J. Swerts, A. Delabie, T. Witters, H. Tielens, S. Dewilde, A. Franquet, J. Meersschaut, T. Conard, J. L. Prado, S. Armini, M. R Baklanov, S. Van Elshocht, A. Uedono, D. R. Huanca, S. G. dos Santos, and G. Kellerman
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ECS J. Solid State Sci. Tech. 2, N103-109
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Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys
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S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono
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Phys. Stat. Sol. C 10, 501-506
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Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy
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S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono
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J. Appl. Phys. 113, 213506(1-6)
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Positron annihilation spectroscopy on nitride-based semiconductors
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A. Uedono, S. Ishibashi, N. Oshima, and, R. Suzuki
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Jpn. J. Appl. Phys. 52, 08JJ02(1-7)
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Point defects introduced by InN alloying into InxGa1?xN probed using a monoenergetic positron beam
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A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac’h, L. W. Sang, S. Ishibashi, and M. Sumiya
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J. Appl. Phys. 113, 123502(1-6)
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Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam
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M. Jiang, D. D. Wang, Z. Q. Chen, S. Kimura, Y. Yamashita, A. Mori, and A. Uedono
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J. Appl. Phys. 113, 043506(1-7)
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Impact of Se flux o the defect formation in polycrystalline Cu(In,Ga)Se2 thin films grown by three stage evaporation process
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M. M. Islam, A. Uedono, T. Sakurai, A. Yamada, S. Ishizuka, K. Matsubara, S. Niki, and K. Akimoto
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J. Appl. Phys. 113, 064907(1-7)
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