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Title Auther Journal/Vol.
Identification of vacancy-type defects in ZnTe using positron annihilation spectroscopy A. S. Hamid, H. Shaban, B. A. Mansour and A. Uedono phys. stat. sol. (a) 202, 1914-1918
Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira and R. Suzuki J. Appl. Phys. 98, 043504 (1-5) 
Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A.S. Hamid, T. Chikyow, K. Torii, and K. Yamada J. Appl. Phys. 98, 023506 (1-5)
Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada J. Cryst. Growth 278, 553-557
Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Gantwell, C. W. Litton, T. Sota and M. Kawasaki Semiconductor Science and Technology 20, S67-S77
Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular beam epitaxy probed using monoenergetic positron beams A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira and R. Suzuki J. Appl. Phys. 97, 43514-1 - 43514-5
Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam A. Uedono, M. Kiyohara, N. Yasui and K. Yamabe J. Appl. Phys. 97, 33508-1 - 33508-5
Vacancy-type defects in strained Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams A. Uedono, N. Hattori, H. Naruoka, S. Ishibashi, R. Suzuki and T. Ohdaira J. Appl. Phys. 97, 23532-1 - 23532-5


Title Auther Journal/Vol.
Reduction of point defect density in cubic GaN Epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice under layers S.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T. Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow and A. Uedono J. Crystal Growth 272, 481-488
Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams A. Uedono, M. Goto, K. Higuchi1, K. Shiraish, K. Yamabe, H. Kitajima, R. Mitsuhashi, A. Horiuchi, K. Torii, T. Arikado R. Suzuki, T. Ohdaira and K. Yamada Jpn. J. Appl. Phys. 43, 7848-7852
Characterizing metal-oxide-semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams A. Uedono, N. Hattori, A. Ogura, J. Kudo, S. Nishikawa, T. Ohdaira, R. Suzuki and T. Mikado Jpn. J. Appl. Phys. 43, 1254-1259
Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques T.Koida, A.Uedono, A.Tsukazaki, T.Sota, M.Kawasaki, and S.F.Chichibu Physica Status Solidi (a) 201, pp.2841-2845
Vacancy-Type Defects in Electroplated Cu Films Probed by Using a Monoenergetic Positron Beam A. Uedono, T. Suzuki and T. Nakamura J. Appl. Phys. 95, 913-917
Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrate by Metalorganic Vapor Phase Epitaxy M. Sugiyama, T. Nosaka, T. Suzuki, T. Koida, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono, S. F. Chichibu Jpn. J. Appl. Phys. 43, 958-965
Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Keading S. Keller, U. K. Mishra, S. Nakamura and S. P. DenBaars J. Appl. Phys. 95, 2495-2504
Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams A. Uedono, T. Ohdaira, R. Suzuki, T. Mikado, S. Fukui, S. Kimura, H. Miyamoto and H. Nemoto J. Polym. Sci. B 42, 341-346


Title Auther Journal/Vol.
Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation A. Uedono, K. Shimoyama, M. Kiyohara and K. Yamabe J. Appl. Phys. 94, 5193-5198
Improvement of Hydrogen Absorption Rate of Pd by Ion Implantation H. Abe, H. Uchida, Y. Azuma, A. Uedono, Z.Q. Chen and H. Ito Nucl. Inst. & Methods B 206, 224-227
Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam A. Uedono, H. Bang, K. Horibe, S. Morishima and K. Akimoto J. Appl. Phys. 93, 5181-5184
Hydrogen-Terminated Defects in Ion-Implanted Silicon Probed by Monoenergetic Positron Beams A. Uedono, T. Mori, K. Morisawa, K. Murakami, T. Ohdaira, R. Suzuki, T. Mikado, K. Ishioka, M. Kitajima, S. Hishita, H. Haneda and I. Sakaguchiy J. Appl. Phys. 93, 3228-3234
Defects in ZnO Thin Films Grown on ScAlMgO4 Substrates Probed by a Monoenergetic Positron Beam A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z.Q. Chen, SF. Chichibu and H. Koinuma J. Appl. Phys. 93, 2481-2485
Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends Z.Q. Chen, A. Uedono, T. Suzuki and J.S. He J. Radioanalytical and Nuclear Chemistry 255, 291-294
Defects Introduced into SrTiO3 by Auto-Feeding-Epitaxy Studied Using Positron Annihilation Technique A. Uedono, M. Kiyohara, K. Shimoyama, K. Yamabe, T. Ohdaira, R. Suzuki and T. Mikado Mat. Sci. in Semicond. Processing 6, 367-369


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