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| Title |
Auther |
Journal/Vol. |
| Identification of vacancy-type defects in ZnTe using
positron annihilation spectroscopy |
A. S. Hamid, H. Shaban, B. A. Mansour and A. Uedono
|
phys. stat. sol. (a) 202, 1914-1918
|
| Defects introduced into electroplated Cu films
during room-temperature recrystallization probed by a
monoenergetic positron beam |
A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira and R.
Suzuki |
J. Appl. Phys. 98, 043504
(1-5) |
| Annealing properties of open volumes in
HfSiOx and HfAlOx gate dielectrics
studied using monoenergetic positron beams |
A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M.
Muramatsu, R. Suzuki, A.S. Hamid, T. Chikyow, K. Torii,
and K. Yamada |
J. Appl. Phys. 98, 023506 (1-5) |
| Improvement of crystal quality of GaInNAs films
grown by atomic hydrogen-assisted RF-MBE |
Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada |
J. Cryst. Growth 278, 553-557 |
| Exciton-polariton spectra and limiting factors for
the room-temperature photoluminescence efficiency in
ZnO |
S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma,
M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Gantwell, C. W.
Litton, T. Sota and M. Kawasaki |
Semiconductor Science and Technology 20,
S67-S77 |
| Vacancy-type defects in Si-doped InN grown by
plasma-assisted molecular beam epitaxy probed using
monoenergetic positron beams |
A. Uedono, S. F. Chichibu, M. Higashiwaki, T.
Matsui, T. Ohdaira and R. Suzuki |
J. Appl. Phys. 97, 43514-1 - 43514-5
|
| Suppression of oxygen diffusion by thin
Al2O3 films grown on
SrTiO3 studied using a monoenergetic positron
beam |
A. Uedono, M. Kiyohara, N. Yasui and K. Yamabe |
J. Appl. Phys. 97, 33508-1 - 33508-5
|
| Vacancy-type defects in strained Si layers deposited
on SiGe/Si structures probed by using monoenergetic
positron beams |
A. Uedono, N. Hattori, H. Naruoka, S. Ishibashi, R.
Suzuki and T. Ohdaira |
J. Appl. Phys. 97, 23532-1 - 23532-5
| | |
| Title |
Auther |
Journal/Vol. |
| Reduction of point defect density in cubic GaN
Epilayers on (001) GaAs substrates using
AlxGa1-xN/GaN superlattice under
layers |
S.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T.
Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow and
A. Uedono |
J. Crystal Growth 272, 481-488 |
| Characterization of
Hf0.3Al0.7Ox fabricated
by atomic-layer-deposition technique using monoenergetic
positron beams |
A. Uedono, M. Goto, K. Higuchi1, K. Shiraish, K.
Yamabe, H. Kitajima, R. Mitsuhashi, A. Horiuchi, K.
Torii, T. Arikado R. Suzuki, T. Ohdaira and K. Yamada |
Jpn. J. Appl. Phys. 43, 7848-7852
|
| Characterizing metal-oxide-semiconductor structures
consisting of HfSiOx as gate dielectrics
using monoenergetic positron beams |
A. Uedono, N. Hattori, A. Ogura, J. Kudo, S.
Nishikawa, T. Ohdaira, R. Suzuki and T. Mikado |
Jpn. J. Appl. Phys. 43, 1254-1259
|
| Direct comparison of photoluminescence lifetime and
defect densities in ZnO epilayers studied by
time-resolved photoluminescence and slow positron
annihilation techniques |
T.Koida, A.Uedono, A.Tsukazaki, T.Sota, M.Kawasaki,
and S.F.Chichibu |
Physica Status Solidi (a) 201,
pp.2841-2845 |
| Vacancy-Type Defects in Electroplated Cu Films
Probed by Using a Monoenergetic Positron Beam |
A. Uedono, T. Suzuki and T. Nakamura |
J. Appl. Phys. 95, 913-917 |
| Reduced Defect Densities in Cubic GaN Epilayers with
AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs
Substrate by Metalorganic Vapor Phase Epitaxy |
M. Sugiyama, T. Nosaka, T. Suzuki, T. Koida, K.
Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono,
S. F. Chichibu |
Jpn. J. Appl. Phys. 43, 958-965 |
| Radiative and Nonradiative Processes in Strain-Free
AlxGa1-xN Films Studied by
Time-Resolved Photoluminescence and Positron
Annihilation Techniques |
T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P.
Cantu, T. M. Katona, J. F. Keading S. Keller, U. K.
Mishra, S. Nakamura and S. P. DenBaars |
J. Appl. Phys. 95, 2495-2504 |
| Characterization of photoresists for ArF-excimer
laser lithography using monoenergetic positron beams |
A. Uedono, T. Ohdaira, R. Suzuki, T. Mikado, S.
Fukui, S. Kimura, H. Miyamoto and H. Nemoto |
J. Polym. Sci. B 42, 341-346
| | |
| Title |
Auther |
Journal/Vol. |
| Defects in CeO2/SrTiO3
fabricated by automatic feeding epitaxy probed using
positron annihilation |
A. Uedono, K. Shimoyama, M. Kiyohara and K.
Yamabe |
J. Appl. Phys. 94, 5193-5198 |
| Improvement of Hydrogen Absorption Rate of Pd by Ion
Implantation |
H. Abe, H. Uchida, Y. Azuma, A. Uedono, Z.Q. Chen
and H. Ito |
Nucl. Inst. & Methods B 206,
224-227 |
| Defects in Eu- and Tb-doped GaN Probed Using a
Monoenergetic Positron Beam |
A. Uedono, H. Bang, K. Horibe, S. Morishima and K.
Akimoto |
J. Appl. Phys. 93, 5181-5184 |
| Hydrogen-Terminated Defects in Ion-Implanted Silicon
Probed by Monoenergetic Positron Beams |
A. Uedono, T. Mori, K. Morisawa, K. Murakami, T.
Ohdaira, R. Suzuki, T. Mikado, K. Ishioka, M. Kitajima,
S. Hishita, H. Haneda and I. Sakaguchiy |
J. Appl. Phys. 93, 3228-3234 |
| Defects in ZnO Thin Films Grown on
ScAlMgO4 Substrates Probed by a Monoenergetic
Positron Beam |
A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z.Q.
Chen, SF. Chichibu and H. Koinuma |
J. Appl. Phys. 93, 2481-2485 |
| Positron Annihilation Study of Free Volume Holes in
Polymers and Polymer Blends |
Z.Q. Chen, A. Uedono, T. Suzuki and J.S. He |
J.
Radioanalytical and Nuclear Chemistry 255, 291-294
|
| Defects Introduced into SrTiO3 by
Auto-Feeding-Epitaxy Studied Using Positron Annihilation
Technique |
A. Uedono, M. Kiyohara, K. Shimoyama, K. Yamabe, T.
Ohdaira, R. Suzuki and T. Mikado |
Mat. Sci. in Semicond. Processing 6,
367-369
| | | |
