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| Title |
Auther |
Journal/Vol. |
| Epitaxial Growth of
BaTiO3/SrTiO3 Structures on
SrTiO3 Substrate with Automatic Feeding of
Oxygen from the Substrate |
K. Shimoyama, M. Kiyohara, K. Yamabe and A.
Uedono |
J. Appl. Phys. 92, 4625-4630 |
| Study of Oxygen Vacancies in SrTiO3 by
Positron Annihilation |
A. Uedono, K. Shimayama, M. Kiyohara, Z.Q. Chen and
K. Yamabe |
J. Appl. Phys. 92, 2697-2702 |
| Oxygen-Related Defects and Their Annealing Behavior
in Low-Dose Separation-by-Implanted Oxygen (SIMOX)
Wafers Studied by Slow Positron Beams |
Z.Q. Chen, A. Uedono, A. Ogura, H. Ono, R. Suzuki,
T. Ohdaira and T. Mikado |
Appl.
Surf. Sci. 194, 112-115 |
| Positron Annihilation in SiO2-Si Studied
by a Pulsed Slow Positron Beam |
R. Suzuki, T. Ohdaira, A. Uedono and Y. Kobayashi |
Appl.
Surf. Sci. 194, 89-96 |
| Defects-Induced Volume Deviations in ZnSe |
H. Ebe, Z.Q. Chen, A. Uedono, B.P. Zhang, Y. Segawa,
K. Suto, and J. Nishizawa |
J.
Cryst. Growth 237, 1566-1569 |
| Defects in Silicon-on-Insulator Wafers and their
hydrogen interaction Studied by Monoenergetic Positron
Beams |
A. Uedono, Z.Q. Chen, A. Ogura, R. Suzuki, T.
Ohdaira and T. Mikado |
J. Appl. Phys. 91, 6488-6492 |
| Compatibilization of Metallocene
Polyethylene/Polyamide Blends with Maleic Anhydride
Studied by Positron Annihilation |
Z.Q. Chen, A. Uedono, Y.Y. Li and J.S. He |
Jpn.
J. Appl. Phys. 41, 2146-2149
| | |
| Vacancy-Type Defects in
BaTiO3/SrTiO3 Structures Probed by
Monoenergetic Positron Beams |
A. Uedono, K. Shimoyama, M. Kiyohara, Z.Q. Chen, K.
Yamabe, R. Suzuki, T. Ohdaira and T. Mikado |
J. Appl. Phys. 91, 5307-5312 |
| Oxygen-Related Defects in Low-Dose
Separation-by-implanted Oxygen Wafers Probed by
Monoenergetic Positron Beams |
A. Uedono, Z.Q. Chen, A. Ogura, H. Ono, R. Suzuki,
T. Ohdaira and T. Mikado |
J. Appl. Phys. 90, 6026-6031 |
| Nanoporous Structure of Methyl-Silsesquioxane Films
Using Monoenergetic Positron Beams |
A. Uedono, Z.Q. Chen, R. Suzuki, T. Ohdaira, T.
Mikado, S. Fukui, A. Shiota and S. Kimura |
J. Appl. Phys. 90, 2498-2503 |
| Free Volume in Polycarbonate Studied by Positron
Annihilation: Effects of Free Radicals and Trapped
Electrons on Positronium Formation |
Z.Q. Chen, T. Suzuki, K. Kondo, A. Uedono and Y.
Ito |
Jpn. J. Appl. Phys. 40,
5036-5040 |
| Study of Defects in GaN Grown by the Two-Flow
Metalorganic Chemical Vapor Deposition Technique Using
Monoenergetic Positron Beams |
A. Uedono, S.F. Chichibu, Z.Q. Chen, M. Sumiya, R.
Suzuki, T. Ohdaira, T. Mikado, T. Mukai and S.
Nakamura |
J. Appl. Phys. 90, 181-186 |
| Evaluation of SOI Substrates by Positron
Annihilation |
A. Uedono, A. Ogura and S. Tanigawa |
Jpn. J. Appl. Phys. 40,
2903-2906 |
| A Study of Vacancy-Type Defects Introduced by the
Carburization of Si by Monoenergetic Positron Beams |
A. Uedono, M. Muramatsu, T. Ubukata, M. Watanabe, T.
Ichihashi, R. Suzuki, T. Ohdaira, T. Mikado and S.
Takasu |
J. Appl. Phys. 89,
3606-3610 |
| Open Spaces and Molecular Motions in Carbon-Black-
and Silica-Loaded SBR Investigated Using Positron
Annihilation |
A. Uedono, S. Fukui, M. Muramatsu, T. Ubukata, S.
Kimura and S. Tanigawa |
J.
Polym. Sci. B 39, 835-842
| | |
| Low Temperature Buffer Growth for Modulation Doped
SiGe/Ge/SiGe Heterostructures with High Hole Mobility |
T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono and S.
Tanigawa |
Thin
Solid Films 369, 320-323 |
| Oxygen-Related Defects Introduced by
As+-Implantation through Cap Layers in Si Probed by
Monoenergetic Positron Beams |
A. Uedono, M. Muramatsu, T. Ubukata, H. Tanino, S.
Tanigawa, A. Nakano, H. Yamamoto, R. Suzuki, T. Ohdaira
and T. Mikado |
Jpn. J. Appl. Phys. 39, 6126-6129
|
| Crystallization of an Amorphous Layer in
P+-implanted 6H-SiC Studied by Monoenergetic Positron
Beams |
A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, M.
Yoshikawa, I. Nashiyama, T. Frank, G. Pensl, R. Suzuki,
T. Ohdaira and T. Mikado |
J. Appl. Phys. 87, 4119-4125 |
| Annealing Properties of Defects During
Si-on-Insulator Fabrication by Low-Dose Oxygen
Implantation Studied by Monoenergetic Positron Beams |
A. Uedono, S. Tanigawa, A. Ogura, H. Ono, R. Suzuki,
T. Ohdaira and T. Mikado |
J. Appl. Phys. 87, 1659-1665 |
| Positron Annihilation in Silicon in Thermal
Equilibrium at High Temperature |
A. Uedono, M. Watanabe, S. Takasu, T. Sabato and S.
Tanigawa |
J.
Phys. Condens. Matter. 12, 719-728 |
| Open Spaces and Relaxation Processes in the
Subsurface Region of Polypropylene Probed by
Monoenergetic Positron Beams |
A. Uedono, R. Suzuki, T. Ohdaira, T. Mikado, S.
Tanigawa, M. Ban, M. Kyoto and T. Uozumi |
J.
Polym. Sci. B 38, 101-107
| | | |
