|
|
 |
| Title |
Auther |
Journal/Vol. |
Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam
|
A. Uedono, Y. Tsukada, Y. Mikawa, T. Mochizuki, H. Fujisawa, H. Ikeda, K. Kurihara, K. Fujito, S. Terada, S. Ishibashi, and S. F. Chichibu
|
J. Cryst. Growth 448, 117-121
|
Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment
|
W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara
|
APL Mater. 4, 056103(1-7)
|
Nanopores formation and shape evolution in Ge during intense ionizing irradiation
|
S. Hooda, S. A. Khan, B. Satpati, A. Uedono, S. Sellaiyan, K. Asokan, D. Kanjilal, D. Kabiraj
|
Microporous and Mesoporous Mat. 225, 323-330
|
Vacancy behavior in Cu(In1-xGax)Se2 layers grown by a three-stage coevaporation process probed by monoenergetic positron beams
|
A. Uedono, M. M. Islam, T. Sakurai, C. Hugenschmidt, W. Egger, R. Scheer, R. Krause-Rehberg, K. Akimoto
|
Thin Solid Films 603, 418-423
|
Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
|
K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu
|
Jpn. J. Appl. Phys. 55, 05FA03(1-4)
|
Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams
|
A. Uedono, S. Armini, Y. Zhang, T. Kakizaki, R. Krause-Rehberg, W. Anwand, A. Wagner
|
Appl. Surf. Sci. 368, 272-276
|
| |
| Title |
Auther |
Journal/Vol. |
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam
|
A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H. Naramoto, and S. Ishibashi
|
Phys. Status Solidi B 252, 2794-2801
|
Investigation on photoluminescence, electrical and positron lifetime of Eu3+ activated Gd2O3 phosphors
|
T. Selvalakshmi, S. Sellaiyan, A. Uedono, A. C. Bose
|
Mat. Chem. Phys. 166, 73-81
|
Molecular motion and relaxation below glass transition temperature in poly (methyl methacrylate) studied by positron annihilation
|
N. Qi, Z. Q. Chen, and A. Uedono
|
Rad. Phys. Chem. 108, 81-86
|
Thermal behavior of residual defects in low-dose arsenic- and boron-implanted silicon after high-temperature rapid thermal annealing
|
A. Sagara, A. Uedono, and S. Shibata
|
IEEE Trans. Semi. Manufacturing. 28, 92-94
|
Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN
|
K. Kataoka, M. Kanechika, T. Narita, Y. Kimoto, and A. Uedono
|
Phys. Status Solidi B 252, 913-916
|
Free volume profiles at polymer-solid interfaces probed by focused slow positron beam
|
C. Ohrt, K. Rätzke, N. Oshima, Y. Kobayashi, B. E. O’Rourke, R. Suzuki, A. Uedono, and F. Faupel
|
Macromolecules 48, 1493-1498
|
Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
|
K. Ozeki, D. Sekiba, A. Uedono, K. K. Hirakuri, T. Masuzawa, “Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
|
Appl. Surf. Sci. 330, 142-147
|
| |
|
