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Title Auther Journal/Vol.
 Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam
A. Uedono, Y. Tsukada, Y. Mikawa, T. Mochizuki, H. Fujisawa, H. Ikeda, K. Kurihara, K. Fujito, S. Terada, S. Ishibashi, and S. F. Chichibu
J. Cryst. Growth 448, 117-121
 Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment
W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara
APL Mater. 4, 056103(1-7)
 Nanopores formation and shape evolution in Ge during intense ionizing irradiation
S. Hooda, S. A. Khan, B. Satpati, A. Uedono, S. Sellaiyan, K. Asokan, D. Kanjilal, D. Kabiraj
Microporous and Mesoporous Mat. 225, 323-330
 Vacancy behavior in Cu(In1-xGax)Se2 layers grown by a three-stage coevaporation process probed by monoenergetic positron beams
A. Uedono, M. M. Islam, T. Sakurai, C. Hugenschmidt, W. Egger, R. Scheer, R. Krause-Rehberg, K. Akimoto
Thin Solid Films 603, 418-423
 Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and S. F. Chichibu
Jpn. J. Appl. Phys. 55, 05FA03(1-4)
 Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams
A. Uedono, S. Armini, Y. Zhang, T. Kakizaki, R. Krause-Rehberg, W. Anwand, A. Wagner
Appl. Surf. Sci. 368, 272-276

Title Auther Journal/Vol.
 Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam
A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, H. Kudo, H. Naramoto, and S. Ishibashi
Phys. Status Solidi B 252, 2794-2801
 Investigation on photoluminescence, electrical and positron lifetime of Eu3+ activated Gd2O3 phosphors
T. Selvalakshmi, S. Sellaiyan, A. Uedono, A. C. Bose
Mat. Chem. Phys. 166, 73-81
 Molecular motion and relaxation below glass transition temperature in poly (methyl methacrylate) studied by positron annihilation
N. Qi, Z. Q. Chen, and A. Uedono
Rad. Phys. Chem. 108, 81-86
 Thermal behavior of residual defects in low-dose arsenic- and boron-implanted silicon after high-temperature rapid thermal annealing
A. Sagara, A. Uedono, and S. Shibata
IEEE Trans. Semi. Manufacturing. 28, 92-94
 Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN
K. Kataoka, M. Kanechika, T. Narita, Y. Kimoto, and A. Uedono
Phys. Status Solidi B 252, 913-916
 Free volume profiles at polymer-solid interfaces probed by focused slow positron beam
C. Ohrt, K. Rätzke, N. Oshima, Y. Kobayashi, B. E. O’Rourke, R. Suzuki, A. Uedono, and F. Faupel
Macromolecules 48, 1493-1498
 Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
K. Ozeki, D. Sekiba, A. Uedono, K. K. Hirakuri, T. Masuzawa, “Effect of incorporation of deuterium on vacancy-type defects of a-C:H films prepared by plasma CVD
Appl. Surf. Sci. 330, 142-147

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