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| Title |
Auther |
Journal/Vol. |
Page |
| Computational studies of positron states and annihilation parameters in semiconductors - vacancy-type defects in group-III nitrides - |
S. Ishibashi and A. Uedono |
J. Phys.: Conf. Ser. 674 |
012020(1-10)
| | |
| Title |
Auther |
Journal/Vol. |
Page |
| Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam |
A. Uedono, T. Fujishima, Y. Cao, S. Joglekar, D. Piedra, H.-S. Lee, Y. Zhang, Y. Zhang, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios |
2014 Int. Workshop on Junction Technology Extended Abstracts, IEEE Press |
73-77 |
| Point defect characterization of group-III nitrides by using monoenergetic positron beams |
A. Uedono, S. Ishibashi, N. Oshima, R. Suzuki, and M. Sumiya |
ECS Trans. 61 |
19-30 |
| First-principles calculation of positron states and annihilation parameters for group-III nitrides |
S. Ishibashi and A. Uedono |
J. Phys.: Conf. Ser. 505 |
012010(1-4) |
| Defects in nitride-based semiconductors probed by positron annihilation |
A. Uedono, M Sumiya, S Ishibashi, N Oshima, and R Suzuki |
J. of Phys.: Conf. Ser. 505 |
012009(1-6) |
| |
| Title |
Auther |
Journal/Vol. |
Page |
| Positron annihilation lifetime spectroscopy of mechanically milled protein fiber powders and their free volume aspects |
K. Patil, S. Sellaiyan, R. Rajkhowa, T. Tsuzuki, T. Lin, S. V. Smith, X. Wang, and A. Uedono |
J. Phys. Conf. Ser. 443 |
012054 |
| Material characterization for advanced Si LSI process technology by means of positron annihilation |
A Uedono, N Oshima, T Ohdaira, R Suzuki, and S Ishibashi |
J. Phys. Conf. Ser. 443 |
012067 |
| Development of a sample chamber with humidity control for an atmospheric positron probe microanalyzer |
W. Zhou, N. Oshima, Z. Chen, K. Ito, B. E. O'Rourke, R. Kuroda, R. Suzuki, H. Yanagishita, T. Tsutsui, A. Uedono, and N. Hayashizaki |
J. Phys. Conf. Ser. 443 |
012090 |
| |
| Title |
Auther |
Journal/Vol. |
Page |
| Defect characterization of InGaN alloys probed using a monoenergetic positron beam |
A. Uedono, S. Ishibashi, T. Watanabe, X. Q. Wang, S. T. Liu, G. Chen, L. W. Sang, M. Sumiya, and B. Shen |
The 11th Int. Sym. On Advanced Tech. |
113-114 |
| Potential of III-V nitride films for the application to photovoltaic device |
M. Sumiya, A. Uedono, Y. Nakano, and T. Honda |
The 11th Int. Sym. On Advanced Tech. |
109-110 |
| Agglomeration and Dissociation of Vacancies in Electroless Deposited Cu Films Studied by Monoenergetic Positron Beams |
A. Uedono, Y. Dordi, S. Li, G. Mizunaga, K. Tenjinbayashi, N. Oshima, and R. Suzuki |
2012 IEEE Int. Interconnect Tech. Conf. |
Session 9.4 |
| Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing |
A. Sagara, M. Hiraiwa, A. Uedono, and S. Shibata |
12th Int. Workshop on Junction Technology Extended Abstracts, IEEE Press |
81-84 |
| Vacancy-type defects introduced by gas cluster ion implantation to Si probed by monoenergetic positron beams |
A. Uedono, T. Moriya, T. Tsutsui, S. Kimura, N. Oshima, R. Suzuki, S. Ishibashi, H. Matsui, M. Narushima, Y. Ishikawa, M. Graf, and K. Yamashita |
12th Int. Workshop on Junction Technology Extended Abstracts, IEEE Press |
85-88 |
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