| Defect Formation by Ion Implantation in Cz-Si
Studied by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S.
Tanigawa, J. Sugiura and M. Ogasawara |
Mat. Res. Soc. Symp. Proc. 262 |
| B+, P+, As+ and
Si+ Ion Implantation Induced Defects in
Silicon Studied by a Variable-Energy Positron Beam |
J. Sugiura, M. Ogasawara, A. Uedono, L. Wei and S.
Tanigawa |
Mat. Res. Soc. Symp. Proc. 262 |
1055-1060 |
| Defects Introduced by Low Dose Be-Implantation
Probed by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S.
Tanigawa, K. Wada and H. Nakanishi |
Mat. Res. Soc. Symp. Proc. 262 |
325-330 |
| Characterization of Metal-Oxide-Silicon Interfaces
by Monoenergetic Positron Beam |
Y. Ohji, A. Uedono, L. Wei, Y. Tabuki and S.
Tanigawa |
Mat. Res. Soc. Symp. Proc. 262 |
313-318 |
| Characterization of Defects in Heavily Si-Doped GaAs
by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei and S. Tanigawa |
Mat. Res. Soc. Symp. Proc. 262 |
277-282 |
| Evaluation of Vacancy-Type Defects in SIMOX
Substrates by a Slow Positron Beam and a Pulsed Positron
Beam |
H. Kametani, H. Akiyama, Y. Yamaguchi, M. Koumaru,
L. Wei, Y. Tabuki, S. Tanigawa, A. Uedono, S. Watauchi,
Y. Ujihira, R. Suzuki, H. Ohgaki and T. Mikado |
Mat. Res. Soc. Symp. Proc. 262 |
235-240 |
| Point Defect Assisted Crystal Growth of Bulk ZnSe |
K. Terashima, E. Tokizaki, H. Kondo, S. Tanigawa and
A. Uedono |
Mat. Res. Soc. Symp. Proc. 262 |
111-116 |
| Nucleation of Oxygen Precipitates in a Quenched
Czochralski Silicon Crystal |
A. Ikari, H. Haga, O. Yoda, A. Uedono and Y.
Ujihira |
Mat. Res. Soc. Symp. Proc. 262 |
69-74 |
| Free-Volumes in Polypropylene Probed by Positron
Annihilation |
A. Uedono, Y. Ohko, S. Watauchi and Y. Ujihira |
Proc. of Int. Symp. on Material Chemistry in Nuclear
Environment (Tsukuba, 1992, Japan) |
479-487 |
| Free Volumes in Amine-Cured Epoxy Studied by
Positron Annihilation |
E. Ueda, A. Uedono, Y. Ujihira, S. Yamashita, T.
Naito and K. Horie |
Materials Science Forum 105-110 |
1745-1748 |
| Increase of I4 at Melting Point Found in
Polyethylene and Serious Thermal Hysteresis Found in
Polypropylene |
M. Tanaka, K. Takebe, A. Uedono, Y. Ujihira, K.
Horie and T. Asanuma |
Materials Science Forum 105-110 |
1737-1740 |
| Variation of Free Volumes in Polyvinyl Alcohol
Studied by Positron Annihilation |
Y. Suda, A. Uedono and Y. Ujihira |
Materials Science Forum 105-110 |
1721-1724 |
| Monoenergetic Positron Beam Studies of Near Surface
Defects Induced by Low Dose Be-Implantation |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa,
K. Wada and H. Nakanishi |
Materials Science Forum 105-110 |
1483-1486 |
| Vacancy-Type Defects in Si+- and
B+-Implanted Si Probed by a Monoenergetic
Positron Beam |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa,
J. Sugiura and M. Ogasawara |
Materials Science Forum 105-110 |
1479-1482 |
| A Diffusion of Positrons by an Electric Field in MOS
Transistors |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa
and Y. Ohji |
Materials Science Forum 105-110 |
1475-1478 |
| Variable-Energy Positron-Beam Studies of Si
Implanted with MeV-Energy Ions |
A. Uedono, L. Wei, C. Dosho, Y. Tabuki, H. Kondo, S.
Tanigawa and M. Tamura |
Materials Science Forum 105-110 |
1471-1474 |
| Oxygen Microclusters in Quenched Si Studied by
Positron Annihilation |
A. Uedono, Y. Ujihira, A. Ikari, H. Haga and O.
Yoda |
Materials Science Forum 105-110 |
1301-1304 |
| The Effect of Point Defects Introduced by Proton
Irradiation on Positron Annihilation in Si |
Y. K. Cho, H. Kondo, T. Kubota, H. Nakashima, T.
Kawano, A. Uedono, T. Kurihara and S. Tanigawa |
Materials Science Forum 105-110 |
925-928 |
