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Title Auther Journal/Vol.
Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping
S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono
Appl. Phys. Lett. 108, 021904



Title Auther Journal/Vol.
Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method
K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and Shigefusa F. Chichibu
APEX 8, 095501(1-5)
Vacancies in InxGa1-xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam
A. Uedono, K. Kurihara, N. Yoshihara, S. Nagao, and S. Ishibashi
APEX 8, 051002(1-4)



Title Auther Journal/Vol.
 Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam
A. Uedono, N. Yoshihara, Y. Zhang, M. Sun, D. Piedra, T. Fujishima, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios,
APEX 7, 121001(1-4)
 Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
A. Uedono, T. Fujishima, D. Piedra, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios,
Appl. Phys. Lett. 105, 052108(1-4)
Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam A. Uedono, T. Fujishima, Y. Cao, Y. Zhang, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios Appl. Phys. Lett. 103, 082110(1-4)



Title Auther Journal/Vol.
Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements
S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar
Appl. Phys. Lett. 103, 142103(1-5)
Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
T. Fujishima, S. Joglekar, D. Piedra, H.-S. Lee, Y. Zhang, A. Uedono, and T. Palacios
Appl. Phys. Lett. 103, 083508(1-4)



Title Auther Journal/Vol.
Free volume change of elongated polyethylene films studied using a positron probe microanalyzer
T. Oka, N. Oshima, R. Suzuki, A. Uedono, M. Fujinami, and Y. Kobayashi
Appl. Phys. Lett. 101, 203108(1-4)



Title Auther Journal/Vol.
 Slow positron beam apparatus for surface and subsurface analysis of samples in air
N. Oshima, B. E. O’Rourke, R. Kuroda, R. Suzuki, H. Watanabe, S. Kubota, K. Tenjinbayashi, A. Uedono, and N. Hayashizaki
Appl. Phys. Express 4, 066701(1-3)
Investigating the binding properties of porous drug delivery systems using nuclear sensors (radiotracers) and positron annihilation lifetime spectroscopy-Predicting conditions for optimum performance
E. Mume, D. E. Lynch, A. Uedono, S. V. Smith
Dalton Transactions 40, 6278-6288
Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN fractions S. F. Chichibu, K. Hazu, T. Onuma, and A. Uedono Appl. Phys. Lett. 99, 051902(1-3)
Impact of Cu/III ratio on the near-surface defects in polycrystalline CuGaSe2 thin films M.M. Islam, A. Uedono, S. Ishibashi, K. Tenjinbayashi, T. Sakurai, A. Yamada, S. Ishizuka, K. Matsubara, S. Niki, and K. Akimoto Appl. Phys. Lett. 98, 112105 (1-3)



Title Auther Journal/Vol.
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. F. Kaeding, M. Iza, S. P. DenBaars, S. Nakamura, and S. F. Chichibu Appl. Phys. Lett. 96, 091913 (1-3)
Identification of extremely radiative nature of AlN by time-resolved photoluminescence T. Onuma, K. Hazu, A. Uedono, T. Sota, and S. F. Chichibu Appl. Phys. Lett. 96, 061906 (1-3)
Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN S. Chen, A. Uedono, S. Ishibashi, S. Tomita, H. Kudo, and K. Akimoto Appl. Phys. Lett. 96, 051907 (1-3)


Title Auther Journal/Vol.
The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate G. L. Yuan, L. W. Martin, R. Ramesh, and A. Uedono Appl. Phys. Lett. 95, 012904 (1-3) 
Rapid there-dimensional imaging of defect distributions using a high-intensity positron microbeam N. Oshima, R. Suzuki, T. Ohdaira, A. Kinomura, T. Narumi, A. Uedono, and M. Fujinami Appl. Phys. Lett. 94, 194104 (1-3)
Behavior of oxygen vacancies in BiFeO3/SrRuO3/SrTiO3(100) and DyScO3 heterostructures G. L. Yuan, and A. Uedono Appl. Phys. Lett. 94, 132905 (1-3)



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