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| Title |
Auther |
Journal/Vol. |
Controlling the carrier lifetime of nearly threading-dislocation-free ZnO homoepitaxial films by 3d transition-metal doping
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S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, and A. Uedono
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Appl. Phys. Lett. 108, 021904
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| Title |
Auther |
Journal/Vol. |
Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method
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K. Kojima, Y. Tsukada, E. Furukawa, M. Saito, Y. Mikawa, S. Kubo, H. Ikeda, K. Fujito, A. Uedono, and Shigefusa F. Chichibu
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APEX 8, 095501(1-5)
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Vacancies in InxGa1-xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam
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A. Uedono, K. Kurihara, N. Yoshihara, S. Nagao, and S. Ishibashi
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APEX 8, 051002(1-4)
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| Title |
Auther |
Journal/Vol. |
Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam
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A. Uedono, N. Yoshihara, Y. Zhang, M. Sun, D. Piedra, T. Fujishima, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios,
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APEX 7, 121001(1-4)
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Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam
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A. Uedono, T. Fujishima, D. Piedra, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios,
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Appl. Phys. Lett. 105, 052108(1-4)
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| Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam |
A. Uedono, T. Fujishima, Y. Cao, Y. Zhang, N. Yoshihara, S. Ishibashi, M. Sumiya, O. Laboutin, W. Johnson, and T. Palacios |
Appl. Phys. Lett. 103, 082110(1-4) |
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| Title |
Auther |
Journal/Vol. |
Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements
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S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar
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Appl. Phys. Lett. 103, 142103(1-5)
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Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
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T. Fujishima, S. Joglekar, D. Piedra, H.-S. Lee, Y. Zhang, A. Uedono, and T. Palacios
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Appl. Phys. Lett. 103, 083508(1-4)
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| |
| Title |
Auther |
Journal/Vol. |
Free volume change of elongated polyethylene films studied using a positron probe microanalyzer
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T. Oka, N. Oshima, R. Suzuki, A. Uedono, M. Fujinami, and Y. Kobayashi
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Appl. Phys. Lett. 101, 203108(1-4)
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| Title |
Auther |
Journal/Vol. |
Slow positron beam apparatus for surface and subsurface analysis of samples in air
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N. Oshima, B. E. O’Rourke, R. Kuroda, R. Suzuki, H. Watanabe, S. Kubota, K. Tenjinbayashi, A. Uedono, and N. Hayashizaki
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Appl. Phys. Express 4, 066701(1-3)
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Investigating the binding properties of porous drug delivery systems using nuclear sensors (radiotracers) and positron annihilation lifetime spectroscopy-Predicting conditions for optimum performance
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E. Mume, D. E. Lynch, A. Uedono, S. V. Smith
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Dalton Transactions 40, 6278-6288
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| Collateral evidence for an excellent radiative
performance of AlxGa1-xN alloy films of high AlN
fractions |
S. F. Chichibu, K. Hazu, T.
Onuma, and A. Uedono |
Appl. Phys. Lett. 99,
051902(1-3) |
| Impact of Cu/III ratio on the near-surface defects
in polycrystalline CuGaSe2 thin films |
M.M. Islam, A. Uedono, S. Ishibashi, K.
Tenjinbayashi, T. Sakurai, A. Yamada, S. Ishizuka,
K. Matsubara, S. Niki, and K. Akimoto |
Appl. Phys. Lett. 98, 112105
(1-3) | | |
| Title |
Auther |
Journal/Vol. |
| Photoluminescence and positron annihilation studies
on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN
heteroepitaxial layers grown by metalorganic vapor phase
epitaxy |
T. Onuma, A. Uedono, H. Asamizu, H. Sato, J. F.
Kaeding, M. Iza, S. P. DenBaars, S. Nakamura, and S. F.
Chichibu |
Appl. Phys. Lett. 96, 091913
(1-3) |
| Identification of extremely radiative nature of AlN
by time-resolved photoluminescence |
T. Onuma, K. Hazu, A. Uedono, T. Sota, and S. F.
Chichibu |
Appl. Phys. Lett. 96, 061906
(1-3) |
| Effect of V/III flux ratio on luminescence
properties and defect formation of Er-doped GaN |
S. Chen, A. Uedono, S. Ishibashi, S. Tomita, H.
Kudo, and K. Akimoto |
Appl. Phys. Lett. 96, 051907
(1-3) | | |
| Title |
Auther |
Journal/Vol. |
| The dependence of oxygen vacancy distributions in
BiFeO3 films on oxygen pressure and
substrate |
G. L. Yuan, L. W. Martin, R. Ramesh, and A.
Uedono |
Appl. Phys. Lett. 95, 012904
(1-3) |
| Rapid there-dimensional imaging of defect
distributions using a high-intensity positron
microbeam |
N. Oshima, R. Suzuki, T.
Ohdaira, A. Kinomura, T. Narumi, A. Uedono, and M.
Fujinami |
Appl. Phys. Lett. 94, 194104
(1-3) |
| Behavior of oxygen vacancies in
BiFeO3/SrRuO3/SrTiO3(100)
and DyScO3 heterostructures |
G. L. Yuan, and A.
Uedono |
Appl. Phys. Lett. 94, 132905
(1-3) | | |
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