|
|
| Title |
Auther |
Journal/Vol. |
| Defects Introduced by Ar Plasma Exposure in GaAs
Probed by Monoenergetic Positron Beam |
A. Uedono, T. Kawano, S. Tanigawa, K. Wada and H.
Nakanishi |
Jpn. J. Appl. Phys. 33, L1374-L1377
| | |
| Title |
Auther |
Journal/Vol. |
| Open volumes in SiN films for strained Si
transistors probed using monoenergetic positron beams |
A. Uedono, K. Ikeuchi, T. Otsuka, K. Ito, K. Yamabe
,M. Kohno, T. Moriya, N. Okumura, T. Nakanishi, T.
Arikado, T. Ohdaira , R. Suzuki |
Appl. Phys. Lett. 88,252107(1-3)
|
| Impact of nitridation on open volumes in
HfSiOx studied using monoenergetic positron
beams |
A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K.
Eguchi, M. Takayanagi,T. Ohdaira,R. Suzuki , M.
Muramatsu,A. S. Hamid,T. Chikyow |
Appl. Phys. Lett. 88,
171912(1-3) | | |
| Title |
Auther |
Journal/Vol. |
| Positron Study of Vacancy-Type Defects Induced by
Heavy Doping into MBE-Grown GaAs |
A. Uedono and S. Tanigawa |
Jpn. J. Appl. Phys. 29, L346-L348
| | |
| Title |
Auther |
Journal/Vol. |
| Metal/Oxide/Semiconductor Interface Investigated by
Monoenergetic Positrons |
A. Uedono, S. Tanigawa and Y. Ohji |
Phys. Lett. A 133, 82-84 |
| Variable-Energy Positron-Beam Studies of
SiO2/Si Irradiated by Ionizing Radiation |
A. Uedono, S. Tanigawa, K. Suzuki and K. Watanabe |
Appl. Phys. Lett. 53, 473-475 |
| Depth Profile of Vacancy-Type Defects in
B+-Implanted Si with a SiO2
Overlayer by a Variable-Energy Positron Beam |
A. Uedono, S. Tanigawa, J. Sugiura and M.
Ogasawara |
Appl. Phys. Lett. 53, 25-27 |
| Detection of Helium Implanted into Nickel by Slow
Positrons |
A. Uedono, S. Tanigawa and H. Sakairi |
Phys. Lett. A. 129, 249-252 |
| Depth Profiles of Ion-Implantation Induced
Vacancy-Type Defects in GaAs and Si Observed by Slow
Positron |
J.-L. Lee, J.S. Kim, H.M. Park, D.S. Ma, S. Tanigawa
and A. Uedono |
Appl. Phys. Lett. 53, 1302-1304
| | |
| Title |
Auther |
Journal/Vol. |
| Generation of Thermal Muonium in Vacuum |
A.P. Mills, Jr., J. Imazato, S. Saitoh, A. Uedono,
Y. Kawashima and K. Nagamine |
Phys. Rev. Lett. 56,
1463-1466 | | | |
