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| Title |
Auther |
Journal/Vol. |
Page |
| Oxygen-Related Defects in Silicon-On-Insulator
Wafers Probed Monoenergetic Positron Beams |
A. Uedono, H. Yamamoto, A. Nakano, A. Ogura, T.
Ohdaira, R. Suzuki and T. Mikado |
2002 IEEE Int. SOI Conf. Proc |
p.196-197 | | |
| Title |
Auther |
Journal/Vol. |
Page |
| Positron Annihilation Study of Vacancy-Type Defects
in Silicon Carbide Co-Implanted with Aluminum and Carbon
Ions |
T. Ohshima, A. Uedono, H. Abe, Z.Q. Chen, H. Itoh,
M. Yoshikawa, K. Abe, O. Eryu and K. Nakashima |
Physica B 308-310 |
, 652-655 |
| Characterization of Low Temperature Grown Si Layer
for SiGe Pseudo-Substrates by Positron Annihilation
Spectroscopy |
T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono, S.
Tanigawa, R. Suzuki, T. Ohdaira, and T. Mikado |
. Crys. Growth 227-228 |
761-765 |
| Positron Annihilation in Si and Si-Related Materials
in Thermal Equilibrium at High Temperature |
A. Uedono, M. Watanabe, T. Ichihashi, S. Takasu, M.
Muramatsu, T. Ubukata, H. Tanino, T. Shiraishi and S.
Tanigawa |
Materials Science Forum 363-365 |
472-474 |
| Temperature and Irradiation Effects on Positronium
Formation in Polycarbonate |
Z.Q. Chen, T. Suzuki, A. Uedono, S. Tanigawa and Y.
Ito |
Materials Science Forum 363-365 |
297-299 |
| Positron Annihilation Studies of Defects in Ion
Implanted Palladium |
H. Abe, A. Uedono, H. Uchida, A. Komatsu, S. Okada
and H. Itoh |
Materials Science Forum 363-365 |
156-158
| | |
| Title |
Auther |
Journal/Vol. |
Page |
| Relationship Between Donor Activation and Defect
Annealing in 6H-SiC Hot-Implanted with Phosphorus
Ions |
T. Ohshima, A. Uedono, H. Itoh, M. Yoshikawa, K.
Kojima, S. Okada, I. Nashiyama, K. Abe, S. Tanigawa, T.
Frank and G. Pensl |
Materials Science Forum 338-342 |
857-860 | | |
| Title |
Auther |
Journal/Vol. |
Page |
| Characterization of Intrinsic Defects in
CuInSe2 Films by Monoenergetic Positron
Beams |
R. Suzuki, T. Ohdaira, S. Ishibashi, A. Uedono, S.
Niki, P.J. Fons, A. Yamada, T. Mikado, T. Yamazaki and
S. Tanigawa |
Int. Phys. Conf. Ser. 152, Sec. E, |
p. 757-760 |
| Study on Thermal Annealing of Vacancies in
Ion-Implanted 3C-SiC by Positron Annihilation |
T. Ohshima, A. Uedono, H. Itoh, K. Abe, R. Suzuki,
T. Ohdaira, Y. Aoki, M. Yoshikawa, T. Mikado, H. Okumura
S. Yoshida, S. Tanigawa and I. Nashiyama |
Materials Science Forum 264-268 |
745-748
| | |
| Title |
Auther |
Journal/Vol. |
Page |
| Positron Lifetime Study of Semiconductor Thin
Films |
R. Suzuki, T. Ohdaira, A. Uedono, S. Ishibashi, A.
Matsuda, S. Yoshida, Y. Ishida, S. Niki, P.J. Fons, T.
Mikado, T. Yamazaki, S. Tanigawa and Y.K. Cho |
Materials Science Forum 255-257 |
714-717 |
| Moderation of Positrons Generated by an Electron
Linac |
R. Suzuki, T. Ohdaira, T. Mikado, A. Uedono, H.
Ohgaki, T. Yamazaki and S. Tanigawa |
Materials Science Forum 255-257 |
114-118 |
| Environmentally Stable Chemically Amplified
Resist |
Y. Kameyama, H. Tomiyasu, M. Tsukamoto, T. Niinomi,
Y. Tanaka, J. Fujita, T. Ochiai, A. Uedono and S.
Tanigawa |
Proc. of Int. Conf. of International Society for
Optical Engineering 3049 |
238-247 |
| Annealing Properties of Defects in
BF2+ Implanted Silicon |
T. Kitano, M. Watanabe, A. Yaoita, S. Oguro, A.
Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T.
Ohdaira and T. Mikado |
Mat. Res. Soc. Symp. Proc. 438 |
137-142 |
| Effects of Vacancy-Type Defects on
Electrical-Activation of P+ Implanted into
Si |
M. Watanabe, T. Kitano, S. Asada, A. Uedono, T.
Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira
and T. Mikado |
Mat. Res. Soc. Symp. Proc. 438 |
131-136
| | |
| Title |
Auther |
Journal/Vol. |
Page |
| Investigation of Transitions and Relaxations
Processes in Polystyrene by Using Positron
Annihilation |
M. Ban, M. Kyoto, A. Uedono, T. Kawano and S.
Tanigawa |
J. Radioanalytical and Nuclear Chemistry 210 |
479-484
| | | |
