|
|
 |
| Title |
Auther |
Journal/Vol. |
Page |
| Point defects in GaN and related group-III nitrides
studied by means of positron annihilation |
A. Uedono, S. Ishibashi, S. F.
Chichibu, and K. Akimoto |
SPIE Vol.7939 |
79390I(1-10) |
| The role of positron annihilation lifetime studies
and nuclear sensors for characterizing porous
materials |
E. Mume, A. Uedono, G. Mizunaga, D. L. Lynch, and S.
V. Smith |
J. Phys.: Conf. Ser. 262 |
012040 (1-4) |
| Imaging of the distribution of average positron
lifetimes by using a positron probe microanalyzer |
N. Oshima, R. Suzuki, T. Ohdaira, A. Kinomura, S.
Kubota, H. Watanabe, K. Tenjinbayashi, A. Uedono, and M.
Fujinami |
J. Phys.: Conf. Ser. 262 |
012044 (1-4) |
| Understanding the effect of nanoporosity on
optimizing the performance of self-healing materials for
anti-corrosion applications |
S. Sellaiyan, S. V. Smith, A. E. Hughes,
A. Miller, D. R. Jenkins, and A. Uedono |
J. Phys.: Conf. Ser. 262 |
012044 (1-4) |
| Application of positron annihilation technique to
front and backend processes for modern LSI devices |
A. Uedono, S. Ishibashi, N. Oshima, T.
Ohdaira, and R. Suzuki |
J. Phys.: Conf. Ser. 262 |
012061
(1-4) | | |
| Title |
Auther |
Journal/Vol. |
Page |
| 陽電子消滅の基礎と最先端 |
上殿明良，石橋章司，大島永康，大平俊行，鈴木良一 |
応用物理学会 結晶工学分科会 第15回結晶工学セミナーテキスト |
p. 1-8 |
| 低速用電子ビームを用いた構造配線中のLow-k膜及びCu配線の欠陥評価 |
上殿明良，井上尚也，林喜宏，江口和弘，中村友二，廣瀬幸範，吉丸正樹，大島永康，大平俊行，鈴木良一
| 電子デバイスにおける原子輸送･応力問題 第15回研究会予稿集 |
p.31-34 |
| Defect characterization of crystalline
metal oxides and high-k films by means of positron
annihilation |
A.Uedono, S. Ishibashi, N. Oshima, T.
Ohdaira, and R. Suzuki |
Proc. of 2010 10th IEEE International
Conference on Solid-State and Integrated Circuit
Technology |
p.1498-1501 |
| Damage characterization of low-k layers
through Cu damascene process using monoenergetic
positron beams |
A. Uedono, N. Inoue, Y. Hayashi, K.
Eguchi, T. Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima,
T. Ohdaira, and R. Suzuki |
Proc. 13th IEEE Int. Interconnect Tech.
Conf. |
7.2 (1-3) |
| Vacancy-type defects in ultra-shallow
junctions favricated using plasma doping studied by
positron annihilation |
A. Iedono, K. Tsutsui, S. Ishibashi, H.
Watanabe, S. Kubota, K. Tenjinbayashi, Y. Nakagawa, B.
Mizuno, T. Hattori, and H. Iwai |
2010 Int. Workshop on Junction
Technology |
p.149-154 | | |
| Title |
Auther |
Journal/Vol. |
Page |
Reversible and irreversible degradation attributing
to oxygen vacancy in HfSiON gate films during electrical
stress applcation
|
R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K.
Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K.
Yamada, K. Yamabe
|
Proc. IEEE Int. Electron Device Meeting
(IEDM)
|
p.131-134
|
A positron annihilation lifetime measurement system
with an intense psitron microbeam
|
N. Oshima, R. Suzuki, T. Ohdaira, Am Kinomura, T.
Narumi, A. Uedono, and M. Fujinami
|
Radiation Physics and Chemistry 78
|
p.1096-1098
|
Novel low-k SiOC(k=2.4) with superior tolerance to
direct polish and ashing for advanced BEOL
integration
|
N. Asami, T. Owada, S. Akiyama, N. Ohara, Y. Iba, T.
Kouno, H. Kudo, S. Takesako, T. Osada, T. Kirimura, H.
Watatani, A. Uedono, Y. Nara, and M. Kase
|
Proc. 12th IEEE 2009 Int. Interconnect Tech.
|
p.161-163
|
Characterization of low-
SiOCH layers in fine-pitch Cu-damascene interconnects by
monoenergetic positron beams
|
A. Uedono, N. Inoue, Y.
Hayashi, K. Eguchi, T. Nakamura, M. Yoshimaru, N.
Oshima, T. Ohdaira, and R. Suzuki
|
Proc. 12th IEEE 2009
Int. Interconnect Tech.
|
p.75-77
|
Interlaboratory
comparison of positron annihilation lifetime
measurements
|
K. Ito, T. Oka, Y.
Kobayashi, Y. Shirai, K. Wada, M. Matsumoto, M.
Fujinami, T. Hirade, Y. Honda, H. Hosomi, Y. Yanagi, K.
Inoue, H. Saito, K. Sasaki, K. Sato, A. Shimazu, A.
Uedono
|
Materials Science Forum
607
|
p.248-250
|
Decelipment of positron
microbeam in AIST
|
N. Oshima, R. Suzuki, T.
Ohdaira, A. Kinomura, T. Narumi, A. Uedono, and M.
Fujinami
|
Materials Science Forum
607
|
p.238-242
| | |
Physical Understanding of the Reliability
Improvement of Dual High-k CMOSFETs with the Fifth
Element Incorporation into HfSiON Gate
Dielectrics
|
M. Sato, N. Umezawa, N. Mise, S. Kamiyama, M.
Kadoshima, T. Morooka, T. Adachi, T. Chikyow, K. Yamabe,
K. Shiraishi, S. Miyazaki, A. Uedono, K. Yamada, T.
Aoyama, T. Eimori, Y. Nara, and Y. Ohji
|
Tech. Digest 2008 Symposium on VLSI
Technology
|
p.66-67
|
Effect of annealing on electronic characteristics of
HfSiON films fabricated by damascene gate process
|
K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M.
Sato, A. Uedono, K. Shiraishi, N. Umezawa, T. chikyow,
H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada,
and R. Hasunuma
|
ECS Transactions 16
|
p.521-526
|
Impact of Al in Cu alloy interconnects on electro
and stress migration reliabilities
|
K. Maekawa, K. Mori, N. Suzumura, K. Honda, Y.
Hirose, K. Asai, A. Uedono, and M. Kojima
|
Microelectronic Eng. 85
|
p.2137-2141
| | | |
