|
|
 |
| Title |
Auther |
Journal/Vol. |
Page |
| Role of the ionicity in defect formation in Hf-based
dielectrics |
N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y.
Akasaka, S. Inumiya, A. Oshiyama, R. Hasunuma, K.
Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y.
Nara, K. Yamada |
ECS Transactions 11 |
p. 199-211. |
| Vacancy-type defects in MOSFETs with high-k gate
dielectrics probed by monoenergetic positron beams |
A. Uedono, K. Shiraishi, K. Yamabe, S. Inumiya, Y.
Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S.
Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, S.
Ishibashi, T. Ohdaira, R. Suzuki and K. Yamada |
ECS Transactions 11 |
p. 81-90. |
| Tight distribution of dielectric characteristics of
HfSiON in metal gate devices |
R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K.
Shiraishi, N. Umezawa,T. Chikyow, S. Inumiya, M. Sato,
Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki,
K. Yamada, and K. Yamabe |
ECS Transactions 11 |
p. 3-11. |
| Study of high-k gate dielectrics by means of
positron annihilation |
A. Uedono, T. Naito, T. Otsuka, K. Ito, K.
Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N.
Umezawa, A. Hamid, T. Chikyow, T. Ohdaira, R. Suzuki, S.
Ishibashi, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara,
K. Yamada |
phys. stat. sol. (c) 4 |
p.
3599-3604. | | |
| Title |
Auther |
Journal/Vol. |
Page |
Extensive studies for
effects of nitrogen incorporatin into Hf-based high-k
gate dielectrics
|
N. Umezawa, K.
Shiraishi, H. Watanabe, K. Torii, Y. Akasaka, S.
Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T.
Chikyow, K. Yamabe, Y. Nara, and K. Yamada
|
ECS Transactions
2
|
p.63-78
|
| An Unfavorable effect of nitrogen incorporation on
reduction in the oxygen vacancy formation energy in
Hf-based high-k gate oxides |
N. Umezawa, K. Shiraishi, Y. Akasaka, S. Inumiya, A.
Uedono, S. Miyazaki, T. Chikyow, T. Ohno, Y. Nara and K.
Yamada |
Transactions of the Materials Research Society of
Japan 31, No. 1 |
p. 129-132. |
| Characterization of Vacancy Defects in Electroplated
Cu Films by Positron Annihilation and its Impact on
Stress Migration Reliability |
T. Suzuki, T. Nakamura, Y. Mizushima, T. Kouno, A.
Uedono, and H. Tsuchikawa |
AIP Conf. Proc. 817 |
p.
198-204. | | |
| Title |
Auther |
Journal/Vol. |
Page |
Asymmetric Distribution
of Charge Trap in HfO2-Based High-k Gate
Dielectrics
|
K. Higuchi, T. Naito, A.
Uedono, K. Shiraishi, K. Torii, M. Boero, T. Chiyow, S.
Yamasaki, K. Yamada, R. Hasunuma, and K. Yamabe
|
ECS Transactions
1
|
p.777-788
|
| Charge Trapping by Oxygen-Related Defects in
HfO2-based High-k Gate Dielectrics |
K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K.
Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow,
S. Yamasaki, H. Kitajima, K. Yamada and T. Arikado |
IEEE 2005 Int. Reliability Physics Symposium
Proceeding, |
p.648-649 | | |
| Title |
Auther |
Journal/Vol. |
Page |
| Direct observation of vacancy defects in
electroplated Cu films |
T. Suzuki, A.Uedono, T. Nakamura, Y. Mizushima, H.
Kitada and Y. Koura |
Proc. 2004 IEEE Int. Interconnect. Tech. Conf., June
7-9, 2004, San Francisco, USA, |
p. 87-89. |
| Point defects in thin HfAlOx films probed
by monoenergetic positron beams |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K.
Yamabe, K. Yamada, R. Suzuki, T. Ohdaira and T.
Mikado |
Mat. Res. Soc. Symp. Proc. 786, |
E1.2.1-E1.2.6 |
| Vacancy-Type Defects in SrTiO3 Probed by
a Monoenergetic Positron Beam |
A. Uedono, M. Kiyohara, K. Shimoyama, Y. Matsunaga,
N. Yasui and K. Yamabe |
Materials Science Forum 445-446 |
201-203
| | |
| Suppression of the Transient Current of MOS
Consisting of HfAlOx as Gate Dielectrics
Studied by Positron Annihilation |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K.
Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado
|
Extended Abstracts of 2004 International Workshop on
Dielectric Thin Films for Future ULSI Device, May 26-28,
2004, Tokyo, Japan |
p. 120-123 |
| Vacancy-Type Defects in SOI Wafers Probed by a
Monoenergetic Positron Beam |
A. Uedono, A. Ogura, N. Hattori, J. Kudo and S.
Nishikawa |
Proceedings of the Forum on the Science and
Technology of Silicon Materials 2003, November 25-27,
2003, Kanagawa, Japan |
p. 272-280 |
| Improvement in thermal stability of the interfacial
layer for poly Si/HfAlOx gate stacks |
R. Mitsuhashi, A. Horiuchi, A. Uedono and K. Torii
|
Extended Abstracts of International Workshop on Gate
Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 150-154. |
| Study of defects in MOS structures using
HfAlOx gate dielectric by means of positron
annihilation |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K.
Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado
|
Extended Abstracts of International Workshop on Gate
Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 120-123 |
| Degradation of Dielectric Characterizations of
Underlying Ultrathin SiO2 films by Al
Adsorption in High Vacuum |
M. Tanabe, M. Goto, A. Uedono and K. Yamabe |
Extended Abstracts of International Workshop on Gate
Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 18-19. |
| Annealing of a Vacancy-Type Defect and Diffusion of
Implanted Boron in 6H-SiC |
T. Ohshima, A. Uedono, O. Eryu, K.K. Lee, K. Abe, H.
Itoh and K. Nakashima |
Materials Science Forum 433-436 |
633-636
| | | |
