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|
 |
| Title |
Auther |
Journal/Vol. |
Interlaboratory
bomparison of positron annihilation lifetime
measurements for synthetic fused silica and
polycarbonate
|
K. Ito, T. Oka, Y.
Kobayashi, Y. Shirai, K. Wada, M. Matsumoto, M.
Fujinami, T. Hirade, Y. Honda, H. Hosomi, Y. Nagai, K.
Inoue, H. Saito, K. Sakaki, K. Sato, A. Shimizu, and A.
Uedono
|
J. Appl. Phys. 104, 026102
(1-3)
|
| Vacancy-type defects in Er-doped GaN studied by a
monoenergetic positron beam |
A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H.
Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and
S. Ishibashi |
J. App. Phys. 103, 104505
(1-5)
|
| Brightness enhancement method for a high-intensity
positron beam produced by an electron accelerator |
N. Oshima R. Suzuki T. Ohdaira A. Kinomura T. Narumi
A. Uedono and M. Fujinami |
J. App. Phys. 103, 094916
(1-7)
|
Correlation between the
violet luminescence intensity and defect density in AlN
epilayers grown by ammonia-source molecular beam
epitaxy
|
T. Hoshi, T. Koyama, M.
Sugawara, A. Uedono, J. F. Kaeding, R. Sharma, S.
Nakamura, and S. F. Chichibu
|
phys. stat. sol.(c) 5,
2129-2132
|
| Annihilation characteristics of positrons in
free-standing thin metal and polymer films |
A. Uedono, K. Ito, H. Nakamori, S. Ata, T. Ougizawa,
K. Ito, Y. Kobayashi, X. Cao, T. Kurihara, N. Oshima, T.
Ohdaira, R. Suzuki, T. Akahane, M. Doyama, K. Matsuya,
S. Jinno and M. Fujinami |
Nucl. Inst. & Methods B 266, 750-754
| | |
| Title |
Auther |
Journal/Vol. |
Annealing properties of
vacancy-type defects in ion-implanted GaN studied by
monoenergetic positron beams
|
A. Uedono, K. Ito, H.
Nakamori, K. Mori, Y. Nakano, T. Kachi, S. Ishibashi, T.
Ohdaira, and R. Suzuki
|
J. Appl. Phys. 102, 084505
(1-7)
|
| Annealing properties of open volumes in strained SiN
films studied by monoenergetic positron beams |
A. Uedono, K. Ito, T. Narumi, M. Sometani, K.
Yamabe, Y. Miyagawa, T. Murata, K. Honda, N. Hattori, M.
Matsuura, K. Asai, T. Ohdaira and R. Suzuki |
J. App. Phys. 102, 064513 (1-5) |
| Vacancy-fluorine complexes and their impact on the
properties of metal-oxide transistors with high-k gate
dielectrics studied using monoenergetic positron beams
|
A. Uedono, S. Inumiya, T. Matsuki, T. Aoyama, Y.
Nara, S. Ishibashi, T. Ohdaira, R. Suzuki, S. Miyazaki,
and K. Yamada |
J. Appl. Phys. 102, 054511 (1-7)
|
| 合金シードを用いるめっき銅薄膜のキャラクタリゼーション
| 廣瀬幸範，本田和仁，前川和義， 宮崎博史，上殿明良，辻幸一 |
分析化学 56, 465-470 |
| Characterization of metal/high-k structures using
monoenergetic positron beams |
A. Uedono, T. Naito, T. Otsuka, K. Ito, K.
Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N.
Umezawa, T. Chikyow, T. Ohdaira, R. Suzuki, Y. Akasaka,
S. Kamiyama, Y. Nara and K. Yamada |
Jpn. J. Appl. Phys. 46, 3214-3218
|
| Origin of localized excitations in In-containing
three-dimensional bulk (Al,In,Ga)N alloy films probed by
time-resolved photoluminescence and monoenergetic
positron annihilation Techniques |
S.F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell,
A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P.
Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S.
Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and
T. Sota |
Philosophical Magazine 87, 2019-2039
|
| Local bonding structure of high-stress silicon
nitride film modified by UV curing for strained silicon
technology beyond 45 nm node SoC devices |
Y. Miyagawa, T. Murata, Y. Nishida, T. Nakai, A.
Uedono, N. Hattori, M. Matsuura, K. Asai and M. Yoneda
|
Jpn. J. Appl. Phys. 46, 1984-1988
|
| Defects in electroplated Cu and their impact on
stress migration reliability studied using monoenergetic
positron beam |
A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira and R.
Suzuki |
Jpn. J. Appl. Phys. 46, 1938-1941
|
| Guiding principle of energy level controllability of
silicon dangling bonds in HfSiON |
N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y.
Akasaka, S. Inumiya, R. Hasunuma, K. Yamabe, H. Momida,
T. Ohno, K. Ohmori, T. Chikyow, Y. Nara and K. Yamada
|
Jpn. J. Appl. Phys. 46, 1891-1894
| | |
| Title |
Auther |
Journal/Vol. |
| Reversible photodissociation of hexacarbonyl
tungsten in cross-linked polymers |
A. Watanabe, T. Watanabe, Y. J. Shan, K. Tezuka, H.
Imoto and A. Uedono |
Bull. Chem. Soc. Jpn. 79, 1787-1792
|
| Defects in Ga(In)NAs thin films grown by atomic
H-assisted molecular beam epitaxy |
Y. Shimizu, Y. Mura, A. Uedono and Y. Okada |
J. Appl. Phys. 100, 064910 (1-4)
|
| Study of interaction of Hf and SiO2 film
for high-k materials |
T-W. Chiu, M. Tanabe, A. Uedono, R. Hasunuma and K.
Yamabe |
Jpn. J. Appl. Phys. 45, 6253-6255
|
| Introduction of defects into HfO2 gate
dielectrics by metal-gate deposition studied using x-ray
photoelectron spectroscopy and positron annihilation |
A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K.
Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T.
Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara and K. Yamada
|
J. Appl. Phys. 100, 064501 (1-5)
|
| Vacancy-impurity complexes in polycrystalline Si
used as gate electrodes of HfSiON-based
metal-oxide-semiconductors probed using monoenergetic
positron beams |
A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K.
Eguchi, M. Takayanagi, S. Ishibashi, T. Ohdaira, M.
Muramatsu, and R. Suzuki |
J. Appl. Phys. 100, 034509
(1-6)
|
| Origin of defect-insensitive emission probability in
In-containing (Al,In,Ga)N alloy semiconductors |
S.F. Chichibu, A. Uedono, T. Onuma, B.A. Haskell, A.
Chakraborty, T. Koyama, P.T. Fini, S. Keller, S.P.
DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S.
Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and
T. Sota |
Nature
Materials 5, 810-816 |
| Vacancy-type defects and electronic structure of
perovskite-oxide SrTiO3 from positron
annihilation |
A.S. Hamid, A. Uedono, T. Chikyow, K. Uwe, K.
Mochizuki and S. Kawaminami |
phys. stat. sol. (a) 203, 300-305
|
| Improvements in quantum efficiency of excitonic
emissions in ZnO epilayers by the elimination of point
defects |
S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T.
Sota, A. Tsukazaki, A. Ohtomo, and M. Kawasaki |
J. Appl. Phys. 99, 093505
(1-6)
|
| Characterization of HfSiON gate dielectrics using
monoenergetic positron beams |
A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, and
K. Yamabe ,S. Miyazaki ,N. Umezawa, A. Hamid, T. Chikyow
,T. Ohdaira M. Muramatsu , R. Suzuki ,S. Inumiya, S.
Kamiyama, Y. Akasaka, Y. Nara ,K. Yamada |
J. Appl. Phys. 99, 054507 (1-5)
| | | |
