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| Oxygen-Related Defects in O+-implanted
6H-SiC Studied by a Monoenergetic Positron Beam |
A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, Y.
Aoki, M. Yoshikawa and I. Nashiyama |
J. Appl. Phys. 86, 5392-5398 |
| Defects in p+-Gate
Metal-Oxide-Semiconductor Structures Probed by
Monoenergetic Positron Beams |
A. Uedono, M. Hiketa, S. Tanigawa, T. Kitano, T.
Kubota, M. Makabe, R. Suzuki, T. Ohdaira and T. Mikado
|
J. Appl. Phys. 86, 5385-5391 |
| Open Spaces and Molecular Motions of Acrylic Epoxy
Based Network Polymers Probed by Positron
Annihilation |
A. Uedono, W. Aiko, Y. Yamamoto, T. Nakamichi and S.
Tanigawa |
J.
Polym. Sci. B 37, 2875-2880 |
| Annealing Behaviors of Defects in Electron
Irradiated Diamond Probed by Positron Annihilation |
A. Uedono, K. Mori, N. Morishita, H. Itoh, S.
Tanigawa S. Fujii and S. Shikata |
J.
Phys. Condens. Matter. 11, 4925-4934 |
| Defects in Synthesized and Natural Diamond Probed by
Positron Annihilation |
A. Uedono, S. Fujii, N. Morishita, H. Itoh, S.
Tanigawa and S. Shikata |
J.
Phys. Condens. Matter. 11, 4109-4122
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| Characterization of Vacancy-Type Defects and
Phosphorus-Donors Introduced in 6H-SiC by Ion
Implantation |
T. Ohshima, A. Uedono, K. Abe, H. Itoh, Y. Aoki, M.
Yoshikawa, S. Tanigawa and I. Nashiyama |
Appl.
Phys. A 67, 407-412 |
| Investigation of Positron Moderator Materials for
Electron-Linac-Based Slow Positron Beamlines |
R. Suzuki, T. Ohdaira, A. Uedono, Y.K. Cho, S.
Yoshida, Y. Ishida, T. Ohshima, H. Itoh, M. Chiwaki, T.
Mikado, T. Yamazaki and S. Tanigawa |
Jpn. J. Appl. Phys. 37, 4636-4643
|
Open spaces in the
subsurface region of polyethylene probed by
monoenergetic positron beams
|
A. Uedono, R. Suzuki, T.
Ohdaira, T. Uozumi, M. Ban, M. Kyoto, S. Tanigawa, and
T. Mikado
|
J. Polym. sci. B 36,
2597-2605
|
| Open Spaces and Molecular Motions of Polyether-Based
Network Polymers Probed by Positron Annihilation |
A. Uedono, S. Tanigawa, M. Watanabe and A.
Nishimoto |
J. Polym. Sci. B 36, 1919-1925 |
| Defects in Ion Implanted
Hg0.78Cd0.22Te Probed by
Monoenergetic Positron Beams |
A. Uedono, H. Ebe, M. Tanaka, R. Suzuki, T. Ohdaira,
S. Tanigawa, T. Mikado, K. Yamamoto and Y. Miyamoto |
Jpn. J. Appl. Phys. 37, 3910-3914
|
| Investigation of Vacancy-Type Defects in
P+-Implanted 6H-SiC by Monoenergetic Positron Beams |
A. Uedono, T. Ohshima, H. Itoh, R. Suzuki, T.
Ohdaira, S. Tanigawa, Y. Aoki, M. Yoshikawa, I.
Nashiyama and T. Mikado |
Jpn. J. Appl. Phys. 37, 2422-2429
|
| Defects and Their Annealing Properties in
B+-Implanted Hg0.78Cd0.22Te
Studied by Positron Annihilation |
A. Uedono, H. Ebe, M. Tanaka, S. Tanigawa, K.
Yamamoto and Y. Miyamoto |
Jpn. J. Appl. Phys. 37, 786-791
| | |
| Evidence for Formation of n+-GaAs layer
in Pd/Ge ohmic contact to n-type GaAs |
J.-L. Lee, Y.-T. Kim, J.S. Kwak, H.K. Baik, A.
Uedono and S. Tanigawa |
J. Appl. Phys. 82, 5460-5464 |
| Characterization of Residual Defects in Cubic
Silicon Carbide Subjected to Hot-Implantation and
Subsequent Annealing |
H. Itoh, T. Ohshima, Y. Aoki, K. Abe, M. Yoshikawa,
I. Nashiyama, H. Okumura, S. Yoshida, A. Uedono and S.
Tanigawa |
J. Appl. Phys. 82, 5339-5347 |
| A Study of Native Defects in Ag-doped HgCdTe by
Positron Annihilation |
A. Uedono, K. Ozaki, H. Ebe, T. Moriya, S. Tanigawa,
K. Yamamoto and Y. Miyamoto |
Jpn. J. Appl. Phys. 36, 6661-6667
|
| Annealing Properties of Defects in Ion-Implanted
3C-SiC Studied Using Monoenergetic Positron Beams |
A. Uedono, H. Itoh, T. Ohshima, R. Suzuki, T.
Ohdaira, S. Tanigawa, Y. Aoki, M. Yoshikawa, I.
Nashiyama, T. Mikado, H. Okumura and S. Yoshida |
Jpn. J. Appl. Phys. 36, 6650-6660
|
| Positron Annihilation Studies of Defects in 3C-SiC
Hot-Implanted with Nitrogen and Aluminum Ions |
H. Itoh, A. Uedono, T. Ohshima, Y. Aoki, M.
Yoshikawa, I. Nashiyama, S. Tanigawa, H. Okumura and S.
Yoshida |
Appl.
Phys. A 65, 315-323 |
| Transition and Relaxation Processes of Polyethylene,
Polypropylene, and Polystyrene Studied by Positron
Annihilation |
A. Uedono, T. Kawano, S. Tanigawa, M. Ban, M. Kyoto
and T. Uozumi |
J.
Polym. Sci. B 35, 1601-1609 |
| Defects in the Ti/GaAs System Probed by
Monoenergetic Positron Beams |
A. Uedono, S. Fujii, T. Moriya, T. Kawano, S.
Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado |
J.
Phys. Condens. Matter 9, 6827-6835 |
| Annealing Properties of Defects in B+-
and F+-Implanted Si Studied Using
Monoenergetic Positron Beams |
A. Uedono, T. Kitano, K. Hamada, T. Moriya, T.
Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T.
Mikado |
Jpn. J.
Appl. Phys. 36, 2571-2580 |
| Fluorine-Related Defects in
BF2+-Implanted Si Probed by
Monoenergetic Positron Beams |
A. Uedono, T. Kitano, M. Watanabe, T. Moriya, N.
Komuro, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira
and T. Mikado |
Jpn. J. Appl. Phys. 36, 969-974
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