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Title Auther Journal/Vol.
Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam A. Uedono, S. Ishibashi, K. Tenjinbayashi, T. Tsutsui, K. Nakahara, D. Takamizu, and S. F. Chichibu J. Appl. Phys. 111, 014508 (1-6)
Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams A. Uedono, K. Tenjinbayashi, T. Tsutsui, Y. Shimahara, H. Miyake, K. Hiramatsu, N. Oshima, R. Suzuki, and S. Ishibashi J. Appl. Phys. 111, 013512 (1-5)
Variation of chemical vapor deposited SiO2 density due to generation and shrinkage of open space during thermal annealing
M. Sometani, R. Hasunuma, M. Ogino, H. Kuribayashi, Y. Sugahara, A. Uedono, and K. Yamabe
Jpn. J. Appl. Phys. 51, 021101(1-3)

Title Auther Journal/Vol.
Electronic structure and Fermi surface of the weak ferromagnet Ni3Al A. S. Hamid, A. Uedono, Zx. Major, T. D. Haynes, J. Laverock, M. A. Alam, and S. B. Dugdale Phys. Rev. B 84, 235107
Structure-modification model of progen-based porous SiOC film with ultraviolet curing Y. Oka, A. Uedono, K. Goto, Y. Hirose, M. Matsuura, M. Fujisawa, and K. Asai Jpn. J. Appl. Phys. 50, 05EB06(1-5)

Title Auther Journal/Vol.
Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam A. Uedono, K. Tsutsui, S. Ishibashi, H. Watanabe, S. Kubota, Y. Nakagawa, B. Mizuno, T. Hattori, and H. Iwai Jpn. J. Appl. Phys. 49, 051301 (1-6)
Epitaxial DyScO3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO3 G. Yuan, K. Nishio, M. Lippmaa, and A. Uedono J. Phys. D 43, 025301 (1-5)
Metal ion binding properties of novel wool powders
R. Naik, G. Wen, M. S. Dharmaprakash, S. Hureau, A. Uedono, X. Wang, X. Liu, P. G. Cookson, and S. V. Smith
J. Appl. Polym. Sci. 115, 1642-1650

Title Auther Journal/Vol.
 Characterization of low-k/Cu damascene structures using monoenergetic positron beams
A. Uedono, N, Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima, T. Ohdaira, and R. Suzuki
Jpn. J. Appl. Phys. 48, 120222 (1-3)
 Positron annihilation study on defects in HfSiON films deposited by electron-beam evaporation
G. Yuan, X. Lu, H. Ishiwara, and A. Uedono
 Jpn. J. Appl. Phys. 48, 111404 (1-4)
Relationship between defects and optical properties in Er-doped GaN
S. Chen, A. Uedono, J. Seo, J. Sawahata, and K. Akimoto
J. Crystal Growth 311, 3097-3099
Point defects in group-III nitride semiconductors studied by positron annihilation
A. Uedono, S. Ishibashi, T. Ohdaira, and R. Suzuki
J. Crystal Growth 311, 3075-3079
Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and mnoenergetic positron annihilation techniques
M. Kubota, T. Onuma, Y. Ishihara, A. Usui, A. Uedono, and S. F. Chichibu
J. Appl. Phys. 105, 083542 (1-9)
A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam
K. Yamanaka, and A. Uedono
Scripta Materialia 61, 8-11
Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
A. Uedono, H. Nakamori, K. Narita, J. Suzuki, X. Wang, S. -B. Che, Y. Ishitani, A. Yoshikawa, and S. Ishibashi
J. Appl. Phys. 105, 054507 (1-6)
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
A. Uedono, S. Ishibashi, S. Keller, C. Moe, P. Cantu, T. M. Katona, D. S. Kamber, Y. Wu, E. Letts, S. A. Newman, S. Nakamura, J. S. Speck, U. K. Mishra, S. P. DenBaars, T. Onuma, and S. F. Chichibu
J. Appl. phys. 105, 054501 (1-6)
Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
T. Onuma, T. Shibata, K. Asai, S/ sumiya, M. Tanaka, T. Sota, A. Uedono, and S. F. Chichibu
J. Appl. Phys. 105, 023529 (1-7)


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