|
|
| Title |
Auther |
Journal/Vol. |
| Defect characterization in Mg-doped GaN studied
using a monoenergetic positron beam |
A. Uedono, S. Ishibashi, K. Tenjinbayashi, T.
Tsutsui, K. Nakahara, D. Takamizu, and S. F. Chichibu |
J. Appl. Phys. 111, 014508
(1-6)
|
| Native cation vacancies in Si-doped AlGaN studied by
monoenergetic positron beams |
A. Uedono, K. Tenjinbayashi, T. Tsutsui, Y.
Shimahara, H. Miyake, K. Hiramatsu, N. Oshima, R.
Suzuki, and S. Ishibashi |
J. Appl. Phys. 111, 013512
(1-5) |
Variation of chemical
vapor deposited SiO2 density due to
generation and shrinkage of open space during thermal
annealing
|
M. Sometani, R.
Hasunuma, M. Ogino, H. Kuribayashi, Y. Sugahara, A.
Uedono, and K. Yamabe
|
Jpn. J. Appl. Phys. 51,
021101(1-3)
| | |
| Title |
Auther |
Journal/Vol. |
| Electronic structure and Fermi surface of the weak
ferromagnet Ni3Al |
A. S. Hamid, A. Uedono, Zx. Major, T. D.
Haynes, J. Laverock, M. A. Alam, and S. B. Dugdale |
Phys. Rev. B 84, 235107
|
| Structure-modification model of progen-based porous
SiOC film with ultraviolet curing |
Y. Oka, A. Uedono, K. Goto, Y. Hirose, M. Matsuura,
M. Fujisawa, and K. Asai |
Jpn. J. Appl. Phys. 50,
05EB06(1-5)
| | |
| Title |
Auther |
Journal/Vol. |
| Vacancy-boron complexes in plasma immersion
ion-implanted Si probed by a monoenergetic positron
beam |
A. Uedono, K. Tsutsui, S. Ishibashi, H. Watanabe, S.
Kubota, Y. Nakagawa, B. Mizuno, T. Hattori, and H.
Iwai |
Jpn. J. Appl. Phys. 49, 051301
(1-6)
|
| Epitaxial DyScO3 films as passivation
layers suppress the diffusion of oxygen vacancies in
SrTiO3 |
G. Yuan, K. Nishio, M. Lippmaa, and A. Uedono |
J. Phys. D 43, 025301 (1-5)
|
Metal ion binding
properties of novel wool powders
|
R. Naik, G. Wen, M. S.
Dharmaprakash, S. Hureau, A. Uedono, X. Wang, X. Liu, P.
G. Cookson, and S. V. Smith
|
J. Appl. Polym. Sci. 115,
1642-1650
| | |
| Title |
Auther |
Journal/Vol. |
Characterization of low-k/Cu damascene
structures using monoenergetic positron beams
|
A. Uedono, N, Inoue, Y. Hayashi, K. Eguchi, T.
Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima, T.
Ohdaira, and R. Suzuki
|
Jpn. J. Appl. Phys. 48, 120222
(1-3)
|
Positron annihilation study on defects in
HfSiON films deposited by electron-beam
evaporation
|
G. Yuan, X. Lu, H.
Ishiwara, and A. Uedono
|
Jpn. J. Appl. Phys. 48, 111404
(1-4)
|
Relationship between
defects and optical properties in Er-doped GaN
|
S. Chen, A. Uedono, J.
Seo, J. Sawahata, and K. Akimoto
|
J. Crystal Growth 311,
3097-3099
|
Point defects in
group-III nitride semiconductors studied by positron
annihilation
|
A. Uedono, S. Ishibashi,
T. Ohdaira, and R. Suzuki
|
J. Crystal Growth 311,
3075-3079
|
Thermal stability of
semi-insulating property of Fe-doped GaN bulk films
studied by photoluminescence and mnoenergetic positron
annihilation techniques
|
M. Kubota, T. Onuma, Y.
Ishihara, A. Usui, A. Uedono, and S. F. Chichibu
|
J. Appl. Phys. 105, 083542
(1-9)
|
A study on vacancy-type
defects in the electroless Cu measured with a
monoenergetic positron beam
|
K. Yamanaka, and A.
Uedono
|
Scripta Materialia 61, 8-11
|
Vacancy-type defects in
Mg-doped InN probed by means of positron
annihilation
|
A. Uedono, H. Nakamori,
K. Narita, J. Suzuki, X. Wang, S. -B. Che, Y. Ishitani,
A. Yoshikawa, and S. Ishibashi
|
J. Appl. Phys. 105, 054507
(1-6)
|
Vacancy-oxygen complexes
and their optical properties in AlN epitaxial films
studied by positron annihilation
|
A. Uedono, S. Ishibashi,
S. Keller, C. Moe, P. Cantu, T. M. Katona, D. S. Kamber,
Y. Wu, E. Letts, S. A. Newman, S. Nakamura, J. S. Speck,
U. K. Mishra, S. P. DenBaars, T. Onuma, and S. F.
Chichibu
|
J. Appl. phys. 105, 054501
(1-6)
|
Free and bound exciton
fine structures in AlN epilayers grown by low-pressure
metalorganic vapor phase epitaxy
|
T. Onuma, T. Shibata, K.
Asai, S/ sumiya, M. Tanaka, T. Sota, A. Uedono, and S.
F. Chichibu
|
J. Appl. Phys. 105, 023529
(1-7)
| | | |
