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Fullaper Letter Proceeding Review

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Year Title Auther Journal/Vol. Page
2005 Charge Trapping by Oxygen-Related Defects in HfO2-based High-k Gate Dielectrics K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K. Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, H. Kitajima, K. Yamada and T. Arikado IEEE 2005 Int. Reliability Physics Symposium Proceeding, (2005) p. 648-649.
2005 Direct observation of vacancy defects in electroplated Cu films T. Suzuki, A.Uedono, T. Nakamura, Y. Mizushima, H. Kitada and Y. Koura Proc. 2004 IEEE Int. Interconnect. Tech. Conf., June 7-9, 2004, San Francisco, USA, p. 87-89.
2004 Point defects in thin HfAlOx films probed by monoenergetic positron beams A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado Mat. Res. Soc. Symp. Proc. 786, E1.2.1-E1.2.6
2004 Vacancy-Type Defects in SrTiO3 Probed by a Monoenergetic Positron Beam A. Uedono, M. Kiyohara, K. Shimoyama, Y. Matsunaga, N. Yasui and K. Yamabe Materials Science Forum 445-446 201-203
2003 Suppression of the Transient Current of MOS Consisting of HfAlOx as Gate Dielectrics Studied by Positron Annihilation A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28, 2004, Tokyo, Japan p. 120-123
2003 Vacancy-Type Defects in SOI Wafers Probed by a Monoenergetic Positron Beam A. Uedono, A. Ogura, N. Hattori, J. Kudo and S. Nishikawa Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, November 25-27, 2003, Kanagawa, Japan p. 272-280
2003 Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks R. Mitsuhashi, A. Horiuchi, A. Uedono and K. Torii Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan p. 150-154.
2003 Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan p. 120-123
2003 Degradation of Dielectric Characterizations of Underlying Ultrathin SiO2 films by Al Adsorption in High Vacuum M. Tanabe, M. Goto, A. Uedono and K. Yamabe Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan p. 18-19.
2003 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC T. Ohshima, A. Uedono, O. Eryu, K.K. Lee, K. Abe, H. Itoh and K. Nakashima Materials Science Forum 433-436 633-636
2002 Oxygen-Related Defects in Silicon-On-Insulator Wafers Probed Monoenergetic Positron Beams A. Uedono, H. Yamamoto, A. Nakano, A. Ogura, T. Ohdaira, R. Suzuki and T. Mikado 2002 IEEE Int. SOI Conf. Proc p.196-197
2001 Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions T. Ohshima, A. Uedono, H. Abe, Z.Q. Chen, H. Itoh, M. Yoshikawa, K. Abe, O. Eryu and K. Nakashima Physica B 308-310 , 652-655
2001 Characterization of Low Temperature Grown Si Layer for SiGe Pseudo-Substrates by Positron Annihilation Spectroscopy T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono, S. Tanigawa, R. Suzuki, T. Ohdaira, and T. Mikado . Crys. Growth 227-228 761-765
2001 Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature A. Uedono, M. Watanabe, T. Ichihashi, S. Takasu, M. Muramatsu, T. Ubukata, H. Tanino, T. Shiraishi and S. Tanigawa Materials Science Forum 363-365 472-474
2001 Temperature and Irradiation Effects on Positronium Formation in Polycarbonate Z.Q. Chen, T. Suzuki, A. Uedono, S. Tanigawa and Y. Ito Materials Science Forum 363-365 297-299
2001 Positron Annihilation Studies of Defects in Ion Implanted Palladium H. Abe, A. Uedono, H. Uchida, A. Komatsu, S. Okada and H. Itoh Materials Science Forum 363-365 156-158
2000 Relationship Between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions T. Ohshima, A. Uedono, H. Itoh, M. Yoshikawa, K. Kojima, S. Okada, I. Nashiyama, K. Abe, S. Tanigawa, T. Frank and G. Pensl Materials Science Forum 338-342 857-860
1998 Characterization of Intrinsic Defects in CuInSe2 Films by Monoenergetic Positron Beams R. Suzuki, T. Ohdaira, S. Ishibashi, A. Uedono, S. Niki, P.J. Fons, A. Yamada, T. Mikado, T. Yamazaki and S. Tanigawa Int. Phys. Conf. Ser. 152, Sec. E, p. 757-760
1998 Study on Thermal Annealing of Vacancies in Ion-Implanted 3C-SiC by Positron Annihilation T. Ohshima, A. Uedono, H. Itoh, K. Abe, R. Suzuki, T. Ohdaira, Y. Aoki, M. Yoshikawa, T. Mikado, H. Okumura S. Yoshida, S. Tanigawa and I. Nashiyama Materials Science Forum 264-268 745-748
1997 Positron Lifetime Study of Semiconductor Thin Films R. Suzuki, T. Ohdaira, A. Uedono, S. Ishibashi, A. Matsuda, S. Yoshida, Y. Ishida, S. Niki, P.J. Fons, T. Mikado, T. Yamazaki, S. Tanigawa and Y.K. Cho Materials Science Forum 255-257 714-717
1997 Moderation of Positrons Generated by an Electron Linac R. Suzuki, T. Ohdaira, T. Mikado, A. Uedono, H. Ohgaki, T. Yamazaki and S. Tanigawa Materials Science Forum 255-257 114-118
1997 Environmentally Stable Chemically Amplified Resist Y. Kameyama, H. Tomiyasu, M. Tsukamoto, T. Niinomi, Y. Tanaka, J. Fujita, T. Ochiai, A. Uedono and S. Tanigawa Proc. of Int. Conf. of International Society for Optical Engineering 3049 238-247
1997 Annealing Properties of Defects in BF2+ Implanted Silicon T. Kitano, M. Watanabe, A. Yaoita, S. Oguro, A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado Mat. Res. Soc. Symp. Proc. 438 137-142
1997 Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Si M. Watanabe, T. Kitano, S. Asada, A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado Mat. Res. Soc. Symp. Proc. 438 131-136
1996 Investigation of Transitions and Relaxations Processes in Polystyrene by Using Positron Annihilation M. Ban, M. Kyoto, A. Uedono, T. Kawano and S. Tanigawa J. Radioanalytical and Nuclear Chemistry 210 479-484
1995 Defects in Semiconductors Observed by 2D-ACAR and by Slow-Positron Beam S. Tanigawa, A. Uedono, L. Wei and R. Suzuki NATO Advanced Research Workshop, Advances with Positron Spectroscopy of Solids and Surfaces 729-752
1995 Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation A. Uedono, T. Kawano, X.H. Li, L. Wei, S. Tanigawa, A. Ikari, K. Kawakami, H. Haga and H. Itoh Materials Science Forum 175-178 553-556
1995 Free Volumes in Polystyrene Probed by Positron Annihilation A. Uedono, T. Kawano, L. Wei, S. Tanigawa, M. Ban and K. Kyoto J. de Phys. IV Colloque C1 5 199-203
1995 Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam A. Uedono, L. Wei, T. Kawano, S. Tanigawa, K. Wada and H. Nakanishi J. de Phys. IV Colloque C1 5 87-90
1995 Positron Studies of Oxide-Semiconductor Structures A. Uedono, L. Wei, T. Kawano, S. Tanigawa, R. Suzuki, H. Ohgaki and T. Mikado J. de Phys. IV Colloque C1 5 49-56
1994 Study of Diamond Films Synthesized on Si Substrates by Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and H. Funamoto Trans. Mat. Res. Soc. Jpn. 14B 1575-1578
1994 Defects in HB-GaAs Probed by Positron Annihilation A. Uedono, T. Kawano, L. Wei, S. Tanigawa and S. Fujii Trans. Mat. Res. Soc. Jpn. 14B 1377-1380
1994 Defects in SiO2 Films Deposited on Si Substrates Probed by Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and Y. Ohji Trans. Mat. Res. Soc. Jpn. 14B 1373-1376
1994 The Diffusion Length of Positrons in Different Si Wafers S. Tanigawa, L. Wei and A. Uedono Trans. Mat. Res. Soc. Jpn. 14B 1301-1304
1994 Defects in As-Grown Si Probed by Positron Annihilation A. Uedono, L. Wei, T. Kawano, S. Tanigawa, A. Ikari, K. Kawakami and H. Haga Trans. Mat. Res. Soc. Jpn. 14B 1297-1300
1994 Impurity Effect on the Creation of Point-Defects in GaAs and InP Investigated by a Slow Positron Beam L. Wei, S. Tanigawa and A. Uedono Hyperfine Interactions 84 243-248
1994 Localized Positronium Atoms in Porous Structures Studied by 2D-ACAR A. Uedono and S. Tanigawa Hyperfine Interactions 84, , 237-242
1994 Characterization of Silicon Dioxide Deposited by Low-Temperature CVD Using TEOS and Ozone by Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and K. Fujino A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and K. Fujino 231-236
1994 Defects in Electron Irradiated Amorphous SiO2 Probed by Positron Annihilation A. Uedono, S. Watauchi, Y. Ujihira and O. Yoda Hyperfine Interactions 84 225-230
1994 Characterization of SiO2 by Monoenergetic Positron Beams A. Uedono, S. Watauchi, Y. Ujihira, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi and M. Koumaru AIP Conf. Proc. 202 101-106
1994 Point Defects in As-Grown and Ion Implanted GaAs Probed by a Monoenergetic Positron Beam A. Uedono, S. Fujii, L. Wei and S. Tanigawa AIP Conf. Proc. 202 92-100
1994 Characterization of Thin Films by a Pulsed Positron Beam R. Suzuki, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, K. Awazu, A. Matsuda, Y. Kobayashi, A. Uedono and S. Tanigawa AIP Conf. Proc. 202 84-91
1994 Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation A. Ikari, K. Kawakami, H. Haga, A. Uedono, L. Wei, T. Kawano and S. Tanigawa Mat. Sci. Forum 143&147 , 1583-1588
1993 The Study of Native Defect in as-Grown GaAs by Positron Annihilation S. Fujii, A. Uedono and S. Tanigawa Hyperfine Interactions 79 719-723
1993 Defects in Separation by Implanted Oxygen Wafer Probed by a Monoenergetic Positron Beam A. Uedono, S. Watauchi, Y. Ujihira, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi and M. Koumaru Hyperfine Interactions 79 621-625
1993 Positron Annihilation in Electron Irradiated Cz-Si A. Uedono, Y. Ujihira, A. Ikari, H. Haga and O. Yoda Hyperfine Interactions 79 615-619
1993 Defects in Vitreous SiO2 Probed by Positron Annihilation A. Uedono, L. Wei, X. Li and S. Tanigawa J. de Phys. IV Colloque C4 3 209-211
1993 Characterization of SiO2 films Grown on Si Substrates by Monoenergetic Positron Beam A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki and T. Mikado J. de Phys. IV Colloque C4 3 177-183
1993 Application of Age-Momentum Correlation Measurements for Studies of the Formation of Positronium and Its Reactions in Liquids A. Uedono, R. Suzuki and S. Tanigawa J. de Phys. IV Colloque C4 3, 143-145
1993 Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals A. Ikari, H. Haga, O. Yoda, A. Uedono and S. Tanigawa Mat. Sci. Forum 117&118, 69-72
1993 Vacancies and Interstitial Clusters in As-Grown GaAs Probed by Positron Annihilation A. Uedono, S. Fujii, L. Wei and S. Tanigawa Inst. Phys. Conf. Ser. 129, Chapter 6 p. 513-518
1992 Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S. Tanigawa, J. Sugiura and M. Ogasawara Mat. Res. Soc. Symp. Proc. 262, 1061-1067
1992 B+, P+, As+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam J. Sugiura, M. Ogasawara, A. Uedono, L. Wei and S. Tanigawa Mat. Res. Soc. Symp. Proc. 262, 1055-1060
1992 Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S. Tanigawa, K. Wada and H. Nakanishi Mat. Res. Soc. Symp. Proc. 262, 325-330
1992 Characterization of Metal-Oxide-Silicon Interfaces by Monoenergetic Positron Beam Y. Ohji, A. Uedono, L. Wei, Y. Tabuki and S. Tanigawa Mat. Res. Soc. Symp. Proc. 262, 313-318
1992 Characterization of Defects in Heavily Si-Doped GaAs by a Monoenergetic Positron Beam A. Uedono, Y. Ujihira, L. Wei and S. Tanigawa Mat. Res. Soc. Symp. Proc. 262, 277-282
1992 Evaluation of Vacancy-Type Defects in SIMOX Substrates by a Slow Positron Beam and a Pulsed Positron Beam H. Kametani, H. Akiyama, Y. Yamaguchi, M. Koumaru, L. Wei, Y. Tabuki, S. Tanigawa, A. Uedono, S. Watauchi, Y. Ujihira, R. Suzuki, H. Ohgaki and T. Mikado Mat. Res. Soc. Symp. Proc. 262, 235-240
1992 Point Defect Assisted Crystal Growth of Bulk ZnSe K. Terashima, E. Tokizaki, H. Kondo, S. Tanigawa and A. Uedono Mat. Res. Soc. Symp. Proc. 262, 111-116
1992 Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal A. Ikari, H. Haga, O. Yoda, A. Uedono and Y. Ujihira Mat. Res. Soc. Symp. Proc. 262, 69-74
1992 Free-Volumes in Polypropylene Probed by Positron Annihilation A. Uedono, Y. Ohko, S. Watauchi and Y. Ujihira Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) p. 479-487
1992 Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation E. Ueda, A. Uedono, Y. Ujihira, S. Yamashita, T. Naito and K. Horie Materials Science Forum 105-110, 1745-1748
1992 Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene M. Tanaka, K. Takebe, A. Uedono, Y. Ujihira, K. Horie and T. Asanuma Materials Science Forum 105-110, 1737-1740
1992 Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation Y. Suda, A. Uedono and Y. Ujihira Materials Science Forum 105-110, 1721-1724
1992 Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, K. Wada and H. Nakanishi Materials Science Forum 105-110, 1483-1486
1992 Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, J. Sugiura and M. Ogasawara Materials Science Forum 105-110, 1479-1482
1992 A Diffusion of Positrons by an Electric Field in MOS Transistors A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa and Y. Ohji Materials Science Forum 105-110, 1475-1478
1992 Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions A. Uedono, L. Wei, C. Dosho, Y. Tabuki, H. Kondo, S. Tanigawa and M. Tamura Materials Science Forum 105-110, 1471-1474 (1992).
1992 Oxygen Microclusters in Quenched Si Studied by Positron Annihilation A. Uedono, Y. Ujihira, A. Ikari, H. Haga and O. Yoda Materials Science Forum 105-110, 1301-1304
1992 The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si Y. K. Cho, H. Kondo, T. Kubota, H. Nakashima, T. Kawano, A. Uedono, T. Kurihara and S. Tanigawa Materials Science Forum 105-110, 925-928
1991 Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing K. Terashima, E. Tokizaki, A. Uedono, L. Wei, H. Kondo and S. Tanigawa Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 187-190
1991 Vacancy-Type Defects and Their Annealing Processes in Ion-Implanted Si Studied by a Variable-Energy Positron Beam A. Uedono, L. Wei, S. Tanigawa, J. Sugiura and M. Ogasawara Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) p. 73-78
1990 Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors K. Kojima and A. Uedono Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 1673-1678
1990 Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) p. 495-500
1989 The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam A. Uedono, S. Tanigawa and Y. Ohji Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 711-713
1989 Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 690-692
1989 Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons A. Uedono, S. Tanigawa and H. Sakairi Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) p. 413-415
1988 Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique J.-L. Lee, K.-H. Shin, S. Tanigawa, A. Uedono, J.S. Kim, H.M. Park and D.S. Ma J. de Phys. Colloque C4, 457-460 (1988).
1985 Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface Y. Iwase, A. Uedono and S. Tanigawa Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 977-979
1985 Precision Experiments on the Divacancy Effect in Dilute Al Alloys S. Tanigawa, K. Ito, A. Morisue, A. Uedono, Y. Iwase and S. Fujii Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 886-888
1985 Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam Y. Iwase, A. Uedono, S. Tanigawa and H. Sakairi Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 868-870
1985 The Temperature Dependence of a Positron Trapping Effect in Glassy Metals A. Uedono, Y. Iwase and S. Tanigawa Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) p. 865-867
1985 Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam Y. Iwase, A. Uedono, S. Tanigawa and H. Araki Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan p. 753-755
1985 The Positron Annihilation in GaAs Containing Defects A. Uedono, Y. Iwase and S. Tanigawa Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 711-713

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