Year |
Title |
Auther |
Journal/Vol. |
Page |
2005 |
Charge Trapping by Oxygen-Related Defects in HfO2-based High-k Gate Dielectrics |
K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K. Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, H. Kitajima, K. Yamada and T. Arikado |
IEEE 2005 Int. Reliability Physics Symposium Proceeding, (2005) |
p. 648-649. |
2005 |
Direct observation of vacancy defects in electroplated Cu films |
T. Suzuki, A.Uedono, T. Nakamura, Y. Mizushima, H. Kitada and Y. Koura |
Proc. 2004 IEEE Int. Interconnect. Tech. Conf., June 7-9, 2004, San Francisco, USA, |
p. 87-89. |
2004 |
Point defects in thin HfAlOx films probed by monoenergetic positron beams |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado |
Mat. Res. Soc. Symp. Proc. 786, |
E1.2.1-E1.2.6 |
2004 |
Vacancy-Type Defects in SrTiO3 Probed by a Monoenergetic Positron Beam |
A. Uedono, M. Kiyohara, K. Shimoyama, Y. Matsunaga, N. Yasui and K. Yamabe |
Materials Science Forum 445-446 |
201-203 |
2003 |
Suppression of the Transient Current of MOS Consisting of HfAlOx as Gate Dielectrics Studied by Positron Annihilation |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado |
Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28, 2004, Tokyo, Japan |
p. 120-123 |
2003 |
Vacancy-Type Defects in SOI Wafers Probed by a Monoenergetic Positron Beam |
A. Uedono, A. Ogura, N. Hattori, J. Kudo and S. Nishikawa |
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, November 25-27, 2003, Kanagawa, Japan |
p. 272-280 |
2003 |
Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks |
R. Mitsuhashi, A. Horiuchi, A. Uedono and K. Torii |
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 150-154. |
2003 |
Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation |
A. Uedono, R. Mitsuhashi, A. Horiuchi, K. Torii, K. Yamabe1, K. Yamada, R. Suzuki, T. Ohdaira and T. Mikado |
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 120-123 |
2003 |
Degradation of Dielectric Characterizations of Underlying Ultrathin SiO2 films by Al Adsorption in High Vacuum |
M. Tanabe, M. Goto, A. Uedono and K. Yamabe |
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan |
p. 18-19. |
2003 |
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC |
T. Ohshima, A. Uedono, O. Eryu, K.K. Lee, K. Abe, H. Itoh and K. Nakashima |
Materials Science Forum 433-436 |
633-636 |
2002 |
Oxygen-Related Defects in Silicon-On-Insulator Wafers Probed Monoenergetic Positron Beams |
A. Uedono, H. Yamamoto, A. Nakano, A. Ogura, T. Ohdaira, R. Suzuki and T. Mikado |
2002 IEEE Int. SOI Conf. Proc |
p.196-197 |
2001 |
Positron Annihilation Study of Vacancy-Type Defects in Silicon Carbide Co-Implanted with Aluminum and Carbon Ions |
T. Ohshima, A. Uedono, H. Abe, Z.Q. Chen, H. Itoh, M. Yoshikawa, K. Abe, O. Eryu and K. Nakashima |
Physica B 308-310 |
, 652-655 |
2001 |
Characterization of Low Temperature Grown Si Layer for SiGe Pseudo-Substrates by Positron Annihilation Spectroscopy |
T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono, S. Tanigawa, R. Suzuki, T. Ohdaira, and T. Mikado |
. Crys. Growth 227-228 |
761-765 |
2001 |
Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature |
A. Uedono, M. Watanabe, T. Ichihashi, S. Takasu, M. Muramatsu, T. Ubukata, H. Tanino, T. Shiraishi and S. Tanigawa |
Materials Science Forum 363-365 |
472-474 |
2001 |
Temperature and Irradiation Effects on Positronium Formation in Polycarbonate |
Z.Q. Chen, T. Suzuki, A. Uedono, S. Tanigawa and Y. Ito |
Materials Science Forum 363-365 |
297-299 |
2001 |
Positron Annihilation Studies of Defects in Ion Implanted Palladium |
H. Abe, A. Uedono, H. Uchida, A. Komatsu, S. Okada and H. Itoh |
Materials Science Forum 363-365 |
156-158 |
2000 |
Relationship Between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions |
T. Ohshima, A. Uedono, H. Itoh, M. Yoshikawa, K. Kojima, S. Okada, I. Nashiyama, K. Abe, S. Tanigawa, T. Frank and G. Pensl |
Materials Science Forum 338-342 |
857-860 |
1998 |
Characterization of Intrinsic Defects in CuInSe2 Films by Monoenergetic Positron Beams |
R. Suzuki, T. Ohdaira, S. Ishibashi, A. Uedono, S. Niki, P.J. Fons, A. Yamada, T. Mikado, T. Yamazaki and S. Tanigawa |
Int. Phys. Conf. Ser. 152, Sec. E, |
p. 757-760 |
1998 |
Study on Thermal Annealing of Vacancies in Ion-Implanted 3C-SiC by Positron Annihilation |
T. Ohshima, A. Uedono, H. Itoh, K. Abe, R. Suzuki, T. Ohdaira, Y. Aoki, M. Yoshikawa, T. Mikado, H. Okumura S. Yoshida, S. Tanigawa and I. Nashiyama |
Materials Science Forum 264-268 |
745-748 |
1997 |
Positron Lifetime Study of Semiconductor Thin Films |
R. Suzuki, T. Ohdaira, A. Uedono, S. Ishibashi, A. Matsuda, S. Yoshida, Y. Ishida, S. Niki, P.J. Fons, T. Mikado, T. Yamazaki, S. Tanigawa and Y.K. Cho |
Materials Science Forum 255-257 |
714-717 |
1997 |
Moderation of Positrons Generated by an Electron Linac |
R. Suzuki, T. Ohdaira, T. Mikado, A. Uedono, H. Ohgaki, T. Yamazaki and S. Tanigawa |
Materials Science Forum 255-257 |
114-118 |
1997 |
Environmentally Stable Chemically Amplified Resist |
Y. Kameyama, H. Tomiyasu, M. Tsukamoto, T. Niinomi, Y. Tanaka, J. Fujita, T. Ochiai, A. Uedono and S. Tanigawa |
Proc. of Int. Conf. of International Society for Optical Engineering 3049 |
238-247 |
1997 |
Annealing Properties of Defects in BF2+ Implanted Silicon |
T. Kitano, M. Watanabe, A. Yaoita, S. Oguro, A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado |
Mat. Res. Soc. Symp. Proc. 438 |
137-142 |
1997 |
Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Si |
M. Watanabe, T. Kitano, S. Asada, A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado |
Mat. Res. Soc. Symp. Proc. 438 |
131-136 |
1996 |
Investigation of Transitions and Relaxations Processes in Polystyrene by Using Positron Annihilation |
M. Ban, M. Kyoto, A. Uedono, T. Kawano and S. Tanigawa |
J. Radioanalytical and Nuclear Chemistry 210 |
479-484 |
1995 |
Defects in Semiconductors Observed by 2D-ACAR and by Slow-Positron Beam |
S. Tanigawa, A. Uedono, L. Wei and R. Suzuki |
NATO Advanced Research Workshop, Advances with Positron Spectroscopy of Solids and Surfaces |
729-752 |
1995 |
Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation |
A. Uedono, T. Kawano, X.H. Li, L. Wei, S. Tanigawa, A. Ikari, K. Kawakami, H. Haga and H. Itoh |
Materials Science Forum 175-178 |
553-556 |
1995 |
Free Volumes in Polystyrene Probed by Positron Annihilation |
A. Uedono, T. Kawano, L. Wei, S. Tanigawa, M. Ban and K. Kyoto |
J. de Phys. IV Colloque C1 5 |
199-203 |
1995 |
Plasma Induced Defects in GaAs Probed by a Monoenergetic Positron Beam |
A. Uedono, L. Wei, T. Kawano, S. Tanigawa, K. Wada and H. Nakanishi |
J. de Phys. IV Colloque C1 5 |
87-90 |
1995 |
Positron Studies of Oxide-Semiconductor Structures |
A. Uedono, L. Wei, T. Kawano, S. Tanigawa, R. Suzuki, H. Ohgaki and T. Mikado |
J. de Phys. IV Colloque C1 5 |
49-56 |
1994 |
Study of Diamond Films Synthesized on Si Substrates by Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and H. Funamoto |
Trans. Mat. Res. Soc. Jpn. 14B |
1575-1578 |
1994 |
Defects in HB-GaAs Probed by Positron Annihilation |
A. Uedono, T. Kawano, L. Wei, S. Tanigawa and S. Fujii |
Trans. Mat. Res. Soc. Jpn. 14B |
1377-1380 |
1994 |
Defects in SiO2 Films Deposited on Si Substrates Probed by Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and Y. Ohji |
Trans. Mat. Res. Soc. Jpn. 14B |
1373-1376 |
1994 |
The Diffusion Length of Positrons in Different Si Wafers |
S. Tanigawa, L. Wei and A. Uedono |
Trans. Mat. Res. Soc. Jpn. 14B |
1301-1304 |
1994 |
Defects in As-Grown Si Probed by Positron Annihilation |
A. Uedono, L. Wei, T. Kawano, S. Tanigawa, A. Ikari, K. Kawakami and H. Haga |
Trans. Mat. Res. Soc. Jpn. 14B |
1297-1300 |
1994 |
Impurity Effect on the Creation of Point-Defects in GaAs and InP Investigated by a Slow Positron Beam |
L. Wei, S. Tanigawa and A. Uedono |
Hyperfine Interactions 84 |
243-248 |
1994 |
Localized Positronium Atoms in Porous Structures Studied by 2D-ACAR |
A. Uedono and S. Tanigawa |
Hyperfine Interactions 84, |
, 237-242 |
1994 |
Characterization of Silicon Dioxide Deposited by Low-Temperature CVD Using TEOS and Ozone by Monoenergetic Positron Beams |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and K. Fujino |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and K. Fujino |
231-236 |
1994 |
Defects in Electron Irradiated Amorphous SiO2 Probed by Positron Annihilation |
A. Uedono, S. Watauchi, Y. Ujihira and O. Yoda |
Hyperfine Interactions 84 |
225-230 |
1994 |
Characterization of SiO2 by Monoenergetic Positron Beams |
A. Uedono, S. Watauchi, Y. Ujihira, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi and M. Koumaru |
AIP Conf. Proc. 202 |
101-106 |
1994 |
Point Defects in As-Grown and Ion Implanted GaAs Probed by a Monoenergetic Positron Beam |
A. Uedono, S. Fujii, L. Wei and S. Tanigawa |
AIP Conf. Proc. 202 |
92-100 |
1994 |
Characterization of Thin Films by a Pulsed Positron Beam |
R. Suzuki, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, K. Awazu, A. Matsuda, Y. Kobayashi, A. Uedono and S. Tanigawa |
AIP Conf. Proc. 202 |
84-91 |
1994 |
Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation |
A. Ikari, K. Kawakami, H. Haga, A. Uedono, L. Wei, T. Kawano and S. Tanigawa |
Mat. Sci. Forum 143&147 |
, 1583-1588 |
1993 |
The Study of Native Defect in as-Grown GaAs by Positron Annihilation |
S. Fujii, A. Uedono and S. Tanigawa |
Hyperfine Interactions 79 |
719-723 |
1993 |
Defects in Separation by Implanted Oxygen Wafer Probed by a Monoenergetic Positron Beam |
A. Uedono, S. Watauchi, Y. Ujihira, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi and M. Koumaru |
Hyperfine Interactions 79 |
621-625 |
1993 |
Positron Annihilation in Electron Irradiated Cz-Si |
A. Uedono, Y. Ujihira, A. Ikari, H. Haga and O. Yoda |
Hyperfine Interactions 79 |
615-619 |
1993 |
Defects in Vitreous SiO2 Probed by Positron Annihilation |
A. Uedono, L. Wei, X. Li and S. Tanigawa |
J. de Phys. IV Colloque C4 3 |
209-211 |
1993 |
Characterization of SiO2 films Grown on Si Substrates by Monoenergetic Positron Beam |
A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki and T. Mikado |
J. de Phys. IV Colloque C4 3 |
177-183 |
1993 |
Application of Age-Momentum Correlation Measurements for Studies of the Formation of Positronium and Its Reactions in Liquids |
A. Uedono, R. Suzuki and S. Tanigawa |
J. de Phys. IV Colloque C4 3, |
143-145 |
1993 |
Formation of Oxygen Clusters in Quenched Cz- and MCz-Si Crystals |
A. Ikari, H. Haga, O. Yoda, A. Uedono and S. Tanigawa |
Mat. Sci. Forum 117&118, 69-72 |
|
1993 |
Vacancies and Interstitial Clusters in As-Grown GaAs Probed by Positron Annihilation |
A. Uedono, S. Fujii, L. Wei and S. Tanigawa |
Inst. Phys. Conf. Ser. 129, Chapter 6 |
p. 513-518 |
1992 |
Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S. Tanigawa, J. Sugiura and M. Ogasawara |
Mat. Res. Soc. Symp. Proc. 262, 1061-1067 |
|
1992 |
B+, P+, As+ and Si+ Ion Implantation Induced Defects in Silicon Studied by a Variable-Energy Positron Beam |
J. Sugiura, M. Ogasawara, A. Uedono, L. Wei and S. Tanigawa |
Mat. Res. Soc. Symp. Proc. 262, 1055-1060 |
|
1992 |
Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei, Y. Tabuki, S. Tanigawa, K. Wada and H. Nakanishi |
Mat. Res. Soc. Symp. Proc. 262, 325-330 |
|
1992 |
Characterization of Metal-Oxide-Silicon Interfaces by Monoenergetic Positron Beam |
Y. Ohji, A. Uedono, L. Wei, Y. Tabuki and S. Tanigawa |
Mat. Res. Soc. Symp. Proc. 262, 313-318 |
|
1992 |
Characterization of Defects in Heavily Si-Doped GaAs by a Monoenergetic Positron Beam |
A. Uedono, Y. Ujihira, L. Wei and S. Tanigawa |
Mat. Res. Soc. Symp. Proc. 262, 277-282 |
|
1992 |
Evaluation of Vacancy-Type Defects in SIMOX Substrates by a Slow Positron Beam and a Pulsed Positron Beam |
H. Kametani, H. Akiyama, Y. Yamaguchi, M. Koumaru, L. Wei, Y. Tabuki, S. Tanigawa, A. Uedono, S. Watauchi, Y. Ujihira, R. Suzuki, H. Ohgaki and T. Mikado |
Mat. Res. Soc. Symp. Proc. 262, 235-240 |
|
1992 |
Point Defect Assisted Crystal Growth of Bulk ZnSe |
K. Terashima, E. Tokizaki, H. Kondo, S. Tanigawa and A. Uedono |
Mat. Res. Soc. Symp. Proc. 262, 111-116 |
|
1992 |
Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal |
A. Ikari, H. Haga, O. Yoda, A. Uedono and Y. Ujihira |
Mat. Res. Soc. Symp. Proc. 262, 69-74 |
|
1992 |
Free-Volumes in Polypropylene Probed by Positron Annihilation |
A. Uedono, Y. Ohko, S. Watauchi and Y. Ujihira |
Proc. of Int. Symp. on Material Chemistry in Nuclear Environment (Tsukuba, 1992, Japan) |
p. 479-487 |
1992 |
Free Volumes in Amine-Cured Epoxy Studied by Positron Annihilation |
E. Ueda, A. Uedono, Y. Ujihira, S. Yamashita, T. Naito and K. Horie |
Materials Science Forum 105-110, 1745-1748 |
|
1992 |
Increase of I4 at Melting Point Found in Polyethylene and Serious Thermal Hysteresis Found in Polypropylene |
M. Tanaka, K. Takebe, A. Uedono, Y. Ujihira, K. Horie and T. Asanuma |
Materials Science Forum 105-110, 1737-1740 |
|
1992 |
Variation of Free Volumes in Polyvinyl Alcohol Studied by Positron Annihilation |
Y. Suda, A. Uedono and Y. Ujihira |
Materials Science Forum 105-110, 1721-1724 |
|
1992 |
Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, K. Wada and H. Nakanishi |
Materials Science Forum 105-110, 1483-1486 |
|
1992 |
Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, J. Sugiura and M. Ogasawara |
Materials Science Forum 105-110, 1479-1482 |
|
1992 |
A Diffusion of Positrons by an Electric Field in MOS Transistors |
A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa and Y. Ohji |
Materials Science Forum 105-110, 1475-1478 |
|
1992 |
Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions |
A. Uedono, L. Wei, C. Dosho, Y. Tabuki, H. Kondo, S. Tanigawa and M. Tamura |
Materials Science Forum 105-110, 1471-1474 (1992). |
|
1992 |
Oxygen Microclusters in Quenched Si Studied by Positron Annihilation |
A. Uedono, Y. Ujihira, A. Ikari, H. Haga and O. Yoda |
Materials Science Forum 105-110, 1301-1304 |
|
1992 |
The Effect of Point Defects Introduced by Proton Irradiation on Positron Annihilation in Si |
Y. K. Cho, H. Kondo, T. Kubota, H. Nakashima, T. Kawano, A. Uedono, T. Kurihara and S. Tanigawa |
Materials Science Forum 105-110, 925-928 |
|
1991 |
Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing |
K. Terashima, E. Tokizaki, A. Uedono, L. Wei, H. Kondo and S. Tanigawa |
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) |
p. 187-190 |
1991 |
Vacancy-Type Defects and Their Annealing Processes in Ion-Implanted Si Studied by a Variable-Energy Positron Beam |
A. Uedono, L. Wei, S. Tanigawa, J. Sugiura and M. Ogasawara |
Proc. of Int. Conf. on Evolution in Beam Applications (Takasaki, 1991, Japan) |
p. 73-78 |
1990 |
Photoplastic Effect and Characteristics of Dislocations in Organic Semiconductors |
K. Kojima and A. Uedono |
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) |
p. 1673-1678 |
1990 |
Depth Profiles of Vacancy-Type Defects in Ion-Implanted Si Studied by Monoenergetic Positron Beam |
A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara |
Defect Control in Semiconductors, ed. K. Sumino (Elsevier Science, North-Holland, 1990) |
p. 495-500 |
1989 |
The Accumulation and Inversion States of SiO2/Si Interface of MOS Structure Investigated by a Variable-Energy Positron Beam |
A. Uedono, S. Tanigawa and Y. Ohji |
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) |
p. 711-713 |
1989 |
Ion-Implantation-Induced Damage in Si Studied by Monoenergetic Positrons |
A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara |
Positron Annihilation, eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) |
p. 690-692 |
1989 |
Distribution of He Implanted Into Metals Probed by Monoenergetic Positrons |
A. Uedono, S. Tanigawa and H. Sakairi |
Positron Annihilation , eds. L. Dorikens-Vanpraet, M. Dorikens and D. Segers (World Scientific, Singapore, 1989) |
p. 413-415 |
1988 |
Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique |
J.-L. Lee, K.-H. Shin, S. Tanigawa, A. Uedono, J.S. Kim, H.M. Park and D.S. Ma |
J. de Phys. Colloque C4, 457-460 (1988). |
|
1985 |
Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface |
Y. Iwase, A. Uedono and S. Tanigawa |
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) |
p. 977-979 |
1985 |
Precision Experiments on the Divacancy Effect in Dilute Al Alloys |
S. Tanigawa, K. Ito, A. Morisue, A. Uedono, Y. Iwase and S. Fujii |
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) |
p. 886-888 |
1985 |
Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam |
Y. Iwase, A. Uedono, S. Tanigawa and H. Sakairi |
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) |
p. 868-870 |
1985 |
The Temperature Dependence of a Positron Trapping Effect in Glassy Metals |
A. Uedono, Y. Iwase and S. Tanigawa |
Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) |
p. 865-867 |
1985 |
Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam |
Y. Iwase, A. Uedono, S. Tanigawa and H. Araki |
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan |
p. 753-755 |
1985 |
The Positron Annihilation in GaAs Containing Defects |
A. Uedono, Y. Iwase and S. Tanigawa |
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) |
p. 711-713 |