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Fullaper Letter Proceeding Review

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Year Title Auther Journal/Vol.
2006 Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, S. Ishibashi, T. Ohdaira, M. Muramatsu, and R. Suzuki J. Appl. Phys. 100, 034509 (2006)
2006 Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. Kawasaki J. Appl. Phys. 99, 093505 (2006)
2006 Characterization of HfSiON gate dielectrics using monoenergetic positron beams A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, and K. Yamabe ,S. Miyazaki ,N. Umezawa, A. Hamid, T. Chikyow ,T. Ohdaira M. Muramatsu , R. Suzuki ,S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara ,K. Yamada J. Appl. Phys. 99, 054507 (2006)
2005 Defects introduced into electroplated Cu films during room-temperature recrystallization probed by a monoenergetic positron beam A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira and R. Suzuki J. Appl. Phys. 98, 043504 (2005).
2005 Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams A. Uedono, K. Ikeuchi, K. Yamabe, T. Ohdaira, M. Muramatsu, R. Suzuki, A.S. Hamid, T. Chikyow, K. Torii, and K. Yamada J. Appl. Phys. 98, 023506 (2005).
2005 Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada J. Cryst. Growth 278, 553-557 (2005).
2005 Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO S. F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Gantwell, C. W. Litton, T. Sota and M. Kawasaki Semiconductor Science and Technology 20, S67-S77
2005 Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular beam epitaxy probed using monoenergetic positron beams A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira and R. Suzuki J. Appl. Phys. 97, 43514-1 - 43514-5
2005 Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam A. Uedono, M. Kiyohara, N. Yasui and K. Yamabe J. Appl. Phys. 97, 33508-1 - 33508-5
2005 Vacancy-type defects in strained Si layers deposited on SiGe/Si structures probed by using monoenergetic positron beams A. Uedono, N. Hattori, H. Naruoka, S. Ishibashi, R. Suzuki and T. Ohdaira J. Appl. Phys. 97, 23532-1 - 23532-5
2004 Reduction of point defect density in cubic GaN Epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice under layers S.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T. Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow and A. Uedono J. Crystal Growth 272, 481-488
2004 Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams A. Uedono, M. Goto, K. Higuchi1, K. Shiraish, K. Yamabe, H. Kitajima, R. Mitsuhashi, A. Horiuchi, K. Torii, T. Arikado R. Suzuki, T. Ohdaira and K. Yamada Jpn. J. Appl. Phys. 43, 7848-7852
2004 Characterizing metal-oxide-semiconductor structures consisting of HfSiOx as gate dielectrics using monoenergetic positron beams A. Uedono, N. Hattori, A. Ogura, J. Kudo, S. Nishikawa, T. Ohdaira, R. Suzuki and T. Mikado Jpn. J. Appl. Phys. 43, 1254-1259
2004 Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques T.Koida, A.Uedono, A.Tsukazaki, T.Sota, M.Kawasaki, and S.F.Chichibu Physica Status Solidi (a) 201, pp.2841-2845
2004 Vacancy-Type Defects in Electroplated Cu Films Probed by Using a Monoenergetic Positron Beam A. Uedono, T. Suzuki and T. Nakamura J. Appl. Phys. 95, 913-917
2004 Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrate by Metalorganic Vapor Phase Epitaxy M. Sugiyama, T. Nosaka, T. Suzuki, T. Koida, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow, A. Uedono, S. F. Chichibu Jpn. J. Appl. Phys. 43, 958-965
2004 Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Keading S. Keller, U. K. Mishra, S. Nakamura and S. P. DenBaars J. Appl. Phys. 95, 2495-2504
2004 Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams A. Uedono, T. Ohdaira, R. Suzuki, T. Mikado, S. Fukui, S. Kimura, H. Miyamoto and H. Nemoto J. Polym. Sci. B 42, 341-346
2003 Defects Introduced into SrTiO3 by Auto-Feeding-Epitaxy Studied Using Positron Annihilation Technique A. Uedono, M. Kiyohara, K. Shimoyama, K. Yamabe, T. Ohdaira, R. Suzuki and T. Mikado Mat. Sci. in Semicond. Processing 6, 367-369
2003 Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation A. Uedono, K. Shimoyama, M. Kiyohara and K. Yamabe J. Appl. Phys. 94, 5193-5198
2003 Improvement of Hydrogen Absorption Rate of Pd by Ion Implantation H. Abe, H. Uchida, Y. Azuma, A. Uedono, Z.Q. Chen and H. Ito Nucl. Inst. & Methods B 206, 224-227
2003 Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam A. Uedono, H. Bang, K. Horibe, S. Morishima and K. Akimoto J. Appl. Phys. 93, 5181-5184
2003 Hydrogen-Terminated Defects in Ion-Implanted Silicon Probed by Monoenergetic Positron Beams A. Uedono, T. Mori, K. Morisawa, K. Murakami, T. Ohdaira, R. Suzuki, T. Mikado, K. Ishioka, M. Kitajima, S. Hishita, H. Haneda and I. Sakaguchi J. Appl. Phys. 93, 3228-3234
2003 Defects in ZnO Thin Films Grown on ScAlMgO4 Substrates Probed by a Monoenergetic Positron Beam A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z.Q. Chen, SF. Chichibu and H. Koinuma J. Appl. Phys. 93, 2481-2485
2003 Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends Z.Q. Chen, A. Uedono, T. Suzuki and J.S. He J. Radioanalytical and Nuclear Chemistry 255, 291-294
2002 Epitaxial Growth of BaTiO3/SrTiO3 Structures on SrTiO3 Substrate with Automatic Feeding of Oxygen from the Substrate K. Shimoyama, M. Kiyohara, K. Yamabe and A. Uedono J. Appl. Phys. 92, 4625-4630
2002 Study of Oxygen Vacancies in SrTiO3 by Positron Annihilation A. Uedono, K. Shimayama, M. Kiyohara, Z.Q. Chen and K. Yamabe J. Appl. Phys. 92, 2697-2702
2002 Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams Z.Q. Chen, A. Uedono, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira and T. Mikado Appl. Surf. Sci. 194, 112-115
2002 Positron Annihilation in SiO2-Si Studied by a Pulsed Slow Positron Beam R. Suzuki, T. Ohdaira, A. Uedono and Y. Kobayashi Appl. Surf. Sci. 194, 89-96
2002 Defects-Induced Volume Deviations in ZnSe H. Ebe, Z.Q. Chen, A. Uedono, B.P. Zhang, Y. Segawa, K. Suto, and J. Nishizawa J. Cryst. Growth 237, 1566-1569
2002 Defects in Silicon-on-Insulator Wafers and their hydrogen interaction Studied by Monoenergetic Positron Beams A. Uedono, Z.Q. Chen, A. Ogura, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 91, 6488-6492
2002 Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation Z.Q. Chen, A. Uedono, Y.Y. Li and J.S. He Jpn. J. Appl. Phys. 41, 2146-2149
2001 Vacancy-Type Defects in BaTiO3/SrTiO3 Structures Probed by Monoenergetic Positron Beams A. Uedono, K. Shimoyama, M. Kiyohara, Z.Q. Chen, K. Yamabe, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 91, 5307-5312
2001 Oxygen-Related Defects in Low-Dose Separation-by-implanted Oxygen Wafers Probed by Monoenergetic Positron Beams A. Uedono, Z.Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 90, 6026-6031
2001 Nanoporous Structure of Methyl-Silsesquioxane Films Using Monoenergetic Positron Beams A. Uedono, Z.Q. Chen, R. Suzuki, T. Ohdaira, T. Mikado, S. Fukui, A. Shiota and S. Kimura J. Appl. Phys. 90, 2498-2503
2001 Free Volume in Polycarbonate Studied by Positron Annihilation: Effects of Free Radicals and Trapped Electrons on Positronium Formation Z.Q. Chen, T. Suzuki, K. Kondo, A. Uedono and Y. Ito Jpn. J. Appl. Phys. 40, 5036-5040
2001 Study of Defects in GaN Grown by the Two-Flow Metalorganic Chemical Vapor Deposition Technique Using Monoenergetic Positron Beams A. Uedono, S.F. Chichibu, Z.Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai and S. Nakamura J. Appl. Phys. 90, 181-186
2001 Evaluation of SOI Substrates by Positron Annihilation A. Uedono, A. Ogura and S. Tanigawa Jpn. J. Appl. Phys. 40, 2903-2906
2001 A Study of Vacancy-Type Defects Introduced by the Carburization of Si by Monoenergetic Positron Beams A. Uedono, M. Muramatsu, T. Ubukata, M. Watanabe, T. Ichihashi, R. Suzuki, T. Ohdaira, T. Mikado and S. Takasu J. Appl. Phys. 89, 3606-3610
2001 Open Spaces and Molecular Motions in Carbon-Black- and Silica-Loaded SBR Investigated Using Positron Annihilation A. Uedono, S. Fukui, M. Muramatsu, T. Ubukata, S. Kimura and S. Tanigawa J. Polym. Sci. B 39, 835-842
2000 Low Temperature Buffer Growth for Modulation Doped SiGe/Ge/SiGe Heterostructures with High Hole Mobility T. Ueno, T. Irisawa, Y. Shiraki, A. Uedono and S. Tanigawa Thin Solid Films 369, 320-323
2000 Oxygen-Related Defects Introduced by As+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams A. Uedono, M. Muramatsu, T. Ubukata, H. Tanino, S. Tanigawa, A. Nakano, H. Yamamoto, R. Suzuki, T. Ohdaira and T. Mikado Jpn. J. Appl. Phys. 39, 6126-6129
2000 Crystallization of an Amorphous Layer in P+-implanted 6H-SiC Studied by Monoenergetic Positron Beams A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, M. Yoshikawa, I. Nashiyama, T. Frank, G. Pensl, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 87, 4119-4125
2000 Annealing Properties of Defects During Si-on-Insulator Fabrication by Low-Dose Oxygen Implantation Studied by Monoenergetic Positron Beams A. Uedono, S. Tanigawa, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 87, 1659-1665
2000 Positron Annihilation in Silicon in Thermal Equilibrium at High Temperature A. Uedono, M. Watanabe, S. Takasu, T. Sabato and S. Tanigawa J. Phys. Condens. Matter. 12, 719-728
2000 Open Spaces and Relaxation Processes in the Subsurface Region of Polypropylene Probed by Monoenergetic Positron Beams A. Uedono, R. Suzuki, T. Ohdaira, T. Mikado, S. Tanigawa, M. Ban, M. Kyoto and T. Uozumi J. Polym. Sci. B 38, 101-107
1999 Oxygen-Related Defects in O+-implanted 6H-SiC Studied by a Monoenergetic Positron Beam A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, Y. Aoki, M. Yoshikawa and I. Nashiyama J. Appl. Phys. 86, 5392-5398
1999 Defects in p+-Gate Metal-Oxide-Semiconductor Structures Probed by Monoenergetic Positron Beams A. Uedono, M. Hiketa, S. Tanigawa, T. Kitano, T. Kubota, M. Makabe, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 86, 5385-5391
1999 Open Spaces and Molecular Motions of Acrylic Epoxy Based Network Polymers Probed by Positron Annihilation A. Uedono, W. Aiko, Y. Yamamoto, T. Nakamichi and S. Tanigawa J. Polym. Sci. B 37, 2875-2880
1999 Annealing Behaviors of Defects in Electron Irradiated Diamond Probed by Positron Annihilation A. Uedono, K. Mori, N. Morishita, H. Itoh, S. Tanigawa S. Fujii and S. Shikata J. Phys. Condens. Matter. 11, 4925-4934
1999 Defects in Synthesized and Natural Diamond Probed by Positron Annihilation A. Uedono, S. Fujii, N. Morishita, H. Itoh, S. Tanigawa and S. Shikata J. Phys. Condens. Matter. 11, 4109-4122
1998 Characterization of Vacancy-Type Defects and Phosphorus-Donors Introduced in 6H-SiC by Ion Implantation T. Ohshima, A. Uedono, K. Abe, H. Itoh, Y. Aoki, M. Yoshikawa, S. Tanigawa and I. Nashiyama Appl. Phys. A 67, 407-412
1998 Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines R. Suzuki, T. Ohdaira, A. Uedono, Y.K. Cho, S. Yoshida, Y. Ishida, T. Ohshima, H. Itoh, M. Chiwaki, T. Mikado, T. Yamazaki and S. Tanigawa Jpn. J. Appl. Phys. 37, 4636-4643
1998 Open Spaces and Molecular Motions of Polyether-Based Network Polymers Probed by Positron Annihilation A. Uedono, S. Tanigawa, M. Watanabe and A. Nishimoto J. Polym. Sci. B 36, 1919-1925
1998 Defects in Ion Implanted Hg0.78Cd0.22Te Probed by Monoenergetic Positron Beams A. Uedono, H. Ebe, M. Tanaka, R. Suzuki, T. Ohdaira, S. Tanigawa, T. Mikado, K. Yamamoto and Y. Miyamoto Jpn. J. Appl. Phys. 37, 3910-3914
1998 Investigation of Vacancy-Type Defects in P+-Implanted 6H-SiC by Monoenergetic Positron Beams A. Uedono, T. Ohshima, H. Itoh, R. Suzuki, T. Ohdaira, S. Tanigawa, Y. Aoki, M. Yoshikawa, I. Nashiyama and T. Mikado Jpn. J. Appl. Phys. 37, 2422-2429
1998 Defects and Their Annealing Properties in B+-Implanted Hg0.78Cd0.22Te Studied by Positron Annihilation A. Uedono, H. Ebe, M. Tanaka, S. Tanigawa, K. Yamamoto and Y. Miyamoto Jpn. J. Appl. Phys. 37, 786-791
1997 Evidence for Formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs J.-L. Lee, Y.-T. Kim, J.S. Kwak, H.K. Baik, A. Uedono and S. Tanigawa J. Appl. Phys. 82, 5460-5464
1997 Characterization of Residual Defects in Cubic Silicon Carbide Subjected to Hot-Implantation and Subsequent Annealing H. Itoh, T. Ohshima, Y. Aoki, K. Abe, M. Yoshikawa, I. Nashiyama, H. Okumura, S. Yoshida, A. Uedono and S. Tanigawa J. Appl. Phys. 82, 5339-5347
1997 A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation A. Uedono, K. Ozaki, H. Ebe, T. Moriya, S. Tanigawa, K. Yamamoto and Y. Miyamoto Jpn. J. Appl. Phys. 36, 6661-6667
1997 Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams A. Uedono, H. Itoh, T. Ohshima, R. Suzuki, T. Ohdaira, S. Tanigawa, Y. Aoki, M. Yoshikawa, I. Nashiyama, T. Mikado, H. Okumura and S. Yoshida Jpn. J. Appl. Phys. 36, 6650-6660
1997 Positron Annihilation Studies of Defects in 3C-SiC Hot-Implanted with Nitrogen and Aluminum Ions H. Itoh, A. Uedono, T. Ohshima, Y. Aoki, M. Yoshikawa, I. Nashiyama, S. Tanigawa, H. Okumura and S. Yoshida Appl. Phys. A 65, 315-323
1997 Transition and Relaxation Processes of Polyethylene, Polypropylene, and Polystyrene Studied by Positron Annihilation A. Uedono, T. Kawano, S. Tanigawa, M. Ban, M. Kyoto and T. Uozumi J. Polym. Sci. B 35, 1601-1609
1997 Defects in the Ti/GaAs System Probed by Monoenergetic Positron Beams A. Uedono, S. Fujii, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado J. Phys. Condens. Matter 9, 6827-6835
1997 Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams A. Uedono, T. Kitano, K. Hamada, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado Jpn. J. Appl. Phys. 36, 2571-2580
1997 Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams A. Uedono, T. Kitano, M. Watanabe, T. Moriya, N. Komuro, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado Jpn. J. Appl. Phys. 36, 969-974
1996 Defects in Ion Implanted 3C-SiC Probed by a Monoenergetic Positron Beam A. Uedono, H. Itoh, T. Ohshima, Y. Aoki, M. Yoshikawa, I. Nashiyama, H. Okumura, S. Yoshida, T. Moriya, T. Kawano and S. Tanigawa Jpn. J. Appl. Phys. 35, 5986-5900
1996 Annihilation of Positronium in $B&A(J-SiO2 Investigated by Combined Angular Correlation and Lifetime Measurements S. Dannefaer, T. Friessnegg, D. Kerr, A. Uedono, X. Li and S. Tanigawa Phys. Rev. B 54, 15051-15055
1996 $BM[EE;R>CLG$K$h$k9bJ,;R$N%,%i%9E>0\$H4KOB8=>]$N8!=P(J $B>eEBL@NI(J, $BC+@n>10lO:(J $B9bJ,;RO@J8=8(J 53, 563-574
1996 Study of Relaxation Processes in Polyethylene and Polystyrene by Positron Annihilation A. Uedono, T. Kawano, S. Tanigawa, M. Ban, M. Kyoto and T. Uozumi J. Polym. Sci. B 34, 2145-2151
1996 Free Volumes in Nematic and Smectic Liquid-Crystalline Polymers Probed by Positron Annihilation R. Sadamoto, A. Uedono, T. Kawano, S. Tanigawa, Y. Kosaka, T. Uryu J. Polym. Sci. B 34, 1659-1664
1996 Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation A. Uedono, M. Tachibana, M. Shimizu, M. Satoh, K. Kojima, S. Ishibashi, T. Kawano and S. Tanigawa Jpn. J. Appl. Phys. 35, 3623-3629
1996 Free Volumes in Polystyrene Probed by Positron Annihilation M. Ban, M. Kyoto, A. Uedono, T. Kawano and S. Tanigawa J. Polym. Sci. B 34, 1189-1195
1996 Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P+-Implanted Si Studied Using Monoenergetic Positron Beams A. Uedono, T. Kitano, M. Watanabe, T. Moriya, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira and T. Mikado Jpn. J. Appl. Phys. 35, 2000-2007
1995 A Positron Age-Momentum Correlation Spectrometer for the Study of Open Spaces in Amorphous Polymers A. Uedono, T. Kawano, S. Tanigawa, M. Ban and M. Kyoto Nucl. Inst. & Methods B 103, 511-516
1995 Formation of Oxygen-Related Defects Enhanced by Fluorine in BF2+-Implanted Si Studied by Monoenergetic Positron Beam A. Uedono, T. Moriya, T. Kawano, S. Tanigawa, R. Nagai and K. Umeda Jpn. J. Appl. Phys. 34, 6293-6297
1995 Characterization of Diamond Single Crystals by Means of Double-Crystal X-ray Diffraction and Positron Annihilation S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono and S. Tanigawa Appl. Phys. A 61, 331-333
1995 Defects in TiN Films Probed by Monoenergetic Positron Beam A. Uedono, S. Nanao, T. Moriya, S. Tanigawa, R. Suzuki, T. Ohdaira, T. Mikado and S. Ishibashi Jpn. J. Appl. Phys. 34, 5711-5716
1995 Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam A. Uedono, S. Fujii, T. Moriya, T. Kawano and S. Tanigawa Jpn. J. Appl. Phys. 34, 5505-5509
1995 Positronium Annihilation in SiO2/Si Structure at Low Temperature A. Uedono, T. Moriya, S. Tanigawa, T. Kawano and Y. Ohji J. Appl. Phys. 78, 3269-3273
1995 Study of Various Types of Diamonds by Measurements of Double Crystal X-Ray Diffraction and Positron Annihilation S. Fujii, Y. Nishibayashi, S. Shikata, A. Uedono and S. Tanigawa J. Appl. Phys. 78, 1510-1513
1995 Thermal Variation of Free-Volumes Size Distribution in Polypropylenes Probed by Positron Annihilation Lifetime Technique Y. Ohko, A. Uedono and Y. Ujihira J. Polym. Sci. B 33, 1183-1190
1995 Positron Trapping by Defects in Vitreous Silica at Low Temperature A. Uedono, T. Kawano, S. Tanigawa, A. Urano, M. Kyoto and H. Itoh J. Phys. Condens. Matter 7, 5139-5149
1995 Free Volumes in Liquid-Crystalline Main-Chain Polymer Probed by Positron Annihilation A. Uedono, R. Sadamoto, T. Kawano, S. Tanigawa and T. Uryu J. Polym. Sci. B 33, 891-897
1995 Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams A. Uedono, T. Kawano, S. Tanigawa, R. Suzuki, T. Ohdaira, T. Mikado, S. Fujii and S. Shikata Jpn. J. Appl. Phys. 34, 1772-1777
1994 Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beam A. Uedono, S. Tanigawa, R. Suzuki, H. Ohgaki and T. Mikado Jpn. J. Appl. Phys. 33, 6286-6290
1994 Application of Positron Age-Momentum Correlation Measurement to the Study of Defects in Electron Irradiated Synthetic Silica Glass S. Watauchi, A. Uedono and Y. Ujihira J. Appl. Phys. 76, 4553-4559
1994 Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation A. Ikari, K. Kawakami, H. Haga, A. Uedono, L. Wei, T. Kawano and S. Tanigawa Jpn. J. Appl. Phys. 33, 5585-5589
1994 Defects in Electron Irradiated Vitreous SiO2 Probed by Positron Annihilation A. Uedono, T. Kawano, S. Tanigawa and H. Itoh J. Phys. Condens. Matter 6, 8669-8677
1994 $BM[EE;R>CLG$K$h$kEE;R@~>H $BLJBGIR;J(J, $B>eEBL@NI(J, $B0MED=$(J, $B;aJ?M4Je(J $BF|K\2=3X2q2q;o(J 505-511
1994 Defects in SiO2/Si Structures Probed by Using a Monoenergetic Positron Beam A. Uedono, L. Wei, S. Tanigawa and Y. Ohji Jpn. J. Appl. Phys. 33, 3330-3334
1994 Positronium Formation in SiO2 Films Grown on Si Substrates Studied by Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and Y. Ohji J. Appl. Phys. 75, 3822-3828
1994 Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation A. Ikari, H. Haga, A. Uedono, Y. Ujihira and O. Yoda Jpn. J. Appl. Phys. 33, 1723-1727
1994 Vacancy-Type Defects in Be-implanted InP L. Wei, A. Uedono, S. Tanigawa, K. Wada and H. Nakanishi Jpn. J. Appl. Phys. 33, 33-36
1994 Positron Annihilation in Proton Irradiated Czochralski-Grown Si A. Uedono, Y.K. Cho, S. Tanigawa and A. Ikari Jpn. J. Appl. Phys. 33, 1-5
1994 SiO2 films Deposited on Si Substrates by Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and K. Fujino J. Appl. Phys. 75, 216-222
1993 Positron Annihilation in a Metal/Oxide/Semiconductor Studied by Using a Pulsed Monoenergetic Positron Beam A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado and Y. Ohji J. Appl. Phys. 74, 7251-7256
1993 Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, H. Kametani, H. Akiyama, Y. Yamaguchi and M. Koumaru Jpn. J. Appl. Phys. 32, 3682-3686
1993 Positron Annihilation in Vitreous Silica Glasses A. Uedono and S. Tanigawa Jpn. J. Appl. Phys. 32, 2687-2691
1993 Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing K. Terashima, E. Tokizaki, A. Uedono and Y. Ujihira Jpn. J. Appl. Phys. 32, 736-740
1992 $BM[EE;R $B>eEBL@NI(J, $BNkLZNI0l(J, $BC+@n>10lO:(J Radioisotopes 41, 611-617
1992 Characterization of Diamond Films by Means of a Pulsed Positron Beam R. Suzuki, Y. Kobayashi, T. Mikado, H. Ohgaki, M. Chiwaki, T. Yamazaki, A. Uedono, S. Tanigawa and H. Funamoto Jpn. J. Appl. Phys. 31, 2237-2240
1992 Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography M. Tachibana, S. Motomura, A. Uedono, Q. Tang and K. Kojima Jpn. J. Appl. Phys. 31, 2202-2205
1992 The Depth Profiles of Ion Implantation Induced Vacancy-Type Defects Probed by a Monoenergetic Positron Beam A. Uedono, L. Wei, S. Tanigawa, J. Sugiura, M. Ogasawara and M. Tamura Radiation Effects and Defects in Solids 124, 31-41
1991 Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam A. Uedono, L. Wei, C. Dosho, H. Kondo, S. Tanigawa and M. Tamura Jpn. J. Appl. Phys. 30, 1597-1603
1991 Release Processes of He Implanted in Cu and Ni Studied by a Monoenergetic Positron Beam A. Uedono, S. Tanigawa and H. Sakairi J. Nucl. Mater. 184, 191-196
1991 Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam A. Uedono, L. Wei, C. Dosho, H. Kondo, S. Tanigawa, J. Sugiura and M. Ogasawara Jpn. J. Appl. Phys. 30, 201-206
1990 Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Probed with Slow Positrons A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara Jpn. J. Appl. Phys. 29, 1867-1872
1990 Study of Near Surface Defects in He-Implanted Stainless Steels by Monoenergetic Positron Beam A. Uedono, S. Tanigawa and H. Sakairi J. Nucl. Mater. 173, 307-312
1990 Vacancy-type Defects in Si+-Implanted GaAs and Its Effects on Electrical Activation by Rapid Thermal Annealing J.-L. Lee, A. Uedono, S. Tanigawa and J. Y. Lee J. Appl. Phys. 67, 6153-6158
1990 Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons A. Uedono and S. Tanigawa Jpn. J. Appl. Phys. 29, 909-912
1990 Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons A. Uedono, S. Tanigawa, H. Funamoto, A. Nishikawa and K. Takahashi Jpn. J. Appl. Phys. 29, 555-559
1989 A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara Jpn. J. Appl. Phys. 28, 1293-1297
1989 Depth Profiles of Vacancy-Type Defect in Si+-Implanted GaAs Resulting From Rapid Thermal Annealing J.-L. Lee, K.-H Shim, J.S. Kim, H.M. Park, D.S. Ma, S. Tanigawa and A. Uedono J. Appl. Phys. 65, 396-397
1985 A Study of Agglomeration and Release Processes of Helium Implanted in Nickel by a Variable Energy Positron Beam S. Tanigawa, Y. Iwase, A. Uedono and H. Sakairi J. Nucl. Mater. 133&134, 463-467
1985 $BF1;~Hf3S8!=P$K$h$kM[EE;R>CLG%I%C%W%i!<3H$j$N@:L)B,Dj(J $B4d@%5ANQ!$>eEBL@NI!$C+@n>10lO:!$NkLZ7I0&(J Radioisotopes 34, 195-200

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