筑波大学　上殿研究室

Year	Title	Auther	Journal/Vol.
2006	Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams	A. Uedono, K. Ikeuchi, T. Otsuka, K. Ito, K. Yamabe ,M. Kohno, T. Moriya, N. Okumura, T. Nakanishi, T. Arikado, T. Ohdaira , R. Suzuki	Appl. Phys. Lett. 86, 021914-1 - 021914-3
2006	Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams	A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi,T. Ohdaira,R. Suzuki , M. Muramatsu,A. S. Hamid,T. Chikyow	Appl. Phys. Lett. 88, 171912
2005	Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques	S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck and S. Nakamura	Appl. Phys. Lett. 86, 021914-1 - 021914-3
2004	Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer	) T. Onuma, S.F. Chichibu, A. Uedono, Y.-Z. Yoo, T. Chikyow, T. Sota, M. Kawasaki and H. Koinuma	Appl. Phys. Lett. 85, 5586-5588
2004	Radiative and Nonradiative Excitonic Transitions in Nonpolar (11 0) and Polar (000 ) and (0001) ZnO Epilayers	T. Koida, S. F. Chichibu, A. Uedono, T. Sota, A. Tsukazaki and M. Kawasaki	Appl. Phys. Lett. 84, 1079-1081
2003	Correlation Between the Photoluminescence Lifetime and Defect Density in Bulk and Epitaxial ZnO	T. Koida, S.F. Chichibu, A. Uedono A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa and H. Koinuma	Appl. Phys. Lett. 82, 532-534
2002	Homeoepitaxial Growth of SrTiO3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370oC	K. Shimoyama, M. Kiyohara, A. Uedono and K. Yamabe	Jpn. J. Appl. Phys. 41, L269-L271
2001	Impact of Growth Polar Direction on the Optical Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy	S.F. Chichibu, A. Setoguchi, A. Uedono, K. Yoshimura and M. Sumiya	Appl. Phys. Lett. 78, 28-30
1994	Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam	A. Uedono, T. Kawano, S. Tanigawa, K. Wada and H. Nakanishi	Jpn. J. Appl. Phys. 33, L1374-L1377
1991	Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation	A. Uedono, T. Kawano, L. Wei, S. Tanigawa, A. Ikari, K. Kawakami and H. Itoh	Jpn. J. Appl. Phys. 33, L1131-L1134
1991	Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam	A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, K. Wada and H. Nakanishi	Jpn. J. Appl. Phys. 30, L2002-L2005
1990	Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs	A. Uedono and S. Tanigawa	Jpn. J. Appl. Phys. 29, L346-L348
1988	Metal/Oxide/Semiconductor Interface Investigated by Monoenergetic Positrons	A. Uedono, S. Tanigawa and Y. Ohji	Phys. Lett. A 133, 82-84
1988	Variable-Energy Positron-Beam Studies of SiO2/Si Irradiated by Ionizing Radiation	A. Uedono, S. Tanigawa, K. Suzuki and K. Watanabe	Appl. Phys. Lett. 53, 473-475
1988	Depth Profile of Vacancy-Type Defects in B+-Implanted Si with a SiO2 Overlayer by a Variable-Energy Positron Beam	A. Uedono, S. Tanigawa, J. Sugiura and M. Ogasawara	Appl. Phys. Lett. 53, 25-27
1988	Detection of Helium Implanted into Nickel by Slow Positrons	A. Uedono, S. Tanigawa and H. Sakairi	Phys. Lett. A. 129, 249-252
1988	Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron	J.-L. Lee, J.S. Kim, H.M. Park, D.S. Ma, S. Tanigawa and A. Uedono	Appl. Phys. Lett. 53, 1302-1304
1986	Generation of Thermal Muonium in Vacuum	A.P. Mills, Jr., J. Imazato, S. Saitoh, A. Uedono, Y. Kawashima and K. Nagamine	Phys. Rev. Lett. 56, 1463-1466