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Fullaper Letter

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Year Title Auther Journal/Vol.
2006 Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy Y. Shimizu, Y. Mura, A. Uedono and Y. Okada J. Appl. Phys., 100 064910(1-4)
2006 Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors S.F. Chichibu,A. Uedono , T. Onuma, B.A. Haskell, A. Chakraborty, T. Koyama, P.T. Fini, S. Keller, S.P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sota Nature Materials. doi:10.1038/nmat1726(1-7)
2006 Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo and M. Kawasaki J. Appl. Phys. 99, 093505(1-6)
2005 Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada J. Cryst. Growth 278, 553-557
2005 Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO S.F. Chichibu, A. Uedono, A. Tsukazaki, T. Onuma, M. Zamfirescu, A. Ohtomo, A. Kavokin, G. Gantwell, C. W. Litton, T. Sota and M. Kawasaki Semiconductor Science and Technology 20, S67-S77
2005 Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular beam epitaxy probed using monoenergetic positron beams A. Uedono, S. F. Chichibu, M. Higashiwaki, T. Matsui, T. Ohdaira and R. Suzuki J. Appl. Phys. 97, 043514(1-5)
2004 Reduction of point defect density in cubic GaN Epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice under layers S.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T. Onuma, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow and A. Uedono J. Crystal Growth 272, 481-488
2004 Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques T. Koida, A. Uedono, A. Tsukazaki, T. Sota, M. Kawasaki, and S.F. Chichibu Physica Status Solidi (a) 201, pp.2841-2845
2004 Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrate by Metalorganic Vapor Phase Epitaxy M. Sugiyama, T. Nosaka, T. Suzuki, T. Koida, K. Nakajima, T. Aoyama, M. Sumiya, T. Chikyow,A. Uedono , S. F. Chichibu Jpn. J. Appl. Phys. 43, 958-965
2004 Radiative and Nonradiative Processes in Strain-Free AlxGa1-xN Films Studied by Time-Resolved Photoluminescence and Positron Annihilation Techniques T. Onuma, S. F. Chichibu, A. Uedono, T. Sota, P. Cantu, T. M. Katona, J. F. Keading S. Keller, U. K. Mishra, S. Nakamura and S. P. DenBaars J. Appl. Phys. 95, 2495-2504
2003 Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam A. Uedono, H. Bang, K. Horibe, S. Morishima and K. Akimoto J. Appl. Phys. 93, 5181-5184
2003 Defects in ZnO Thin Films Grown on ScAlMgO4 Substrates Probed by a Monoenergetic Positron Beam A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z.Q. Chen, SF. Chichibu and H. Koinuma J. Appl. Phys. 93, 2481-2485
2002 Defects-Induced Volume Deviations in ZnSe H. Ebe, Z.Q. Chen, A. Uedono, B.P. Zhang, Y. Segawa, K. Suto, and J. Nishizawa J. Cryst. Growth 237, 1566-1569
2002 Defects in Silicon-on-Insulator Wafers and their hydrogen interaction Studied by Monoenergetic Positron Beams A. Uedono, Z.Q. Chen, A. Ogura, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 91, 6488-6492
2001 Study of Defects in GaN Grown by the Two-Flow Metalorganic Chemical Vapor Deposition Technique Using Monoenergetic Positron Beams A. Uedono, S.F. Chichibu, Z.Q. Chen, M. Sumiya, R. Suzuki, T. Ohdaira, T. Mikado, T. Mukai and S. Nakamura J. Appl. Phys. 90, 181-186
2000 Crystallization of an Amorphous Layer in P+-implanted 6H-SiC Studied by Monoenergetic Positron Beams A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, M. Yoshikawa, I. Nashiyama, T. Frank, G. Pensl, R. Suzuki, T. Ohdaira and T. Mikado J. Appl. Phys. 87, 4119-4125
1999 Oxygen-Related Defects in O+-implanted 6H-SiC Studied by a Monoenergetic Positron Beam A. Uedono, S. Tanigawa, T. Ohshima, H. Itoh, Y. Aoki, M. Yoshikawa and I. Nashiyama J. Appl. Phys. 86, 5392-5398

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