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Fullaper Letter

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Year Title Auther Journal/Vol.
2005 Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques S.F. Chichibu, A. Uedono, T. Onuma, T. Sota, B.A. Haskell, S.P. DenBaars, J.S. Speck and S. Nakamura Appl. Phys. Lett. 86, 021914(1-3)
2004 Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer T. Onuma, S.F. Chichibu, A. Uedono, Y.-Z. Yoo, T. Chikyow, T. Sota, M. Kawasaki and H. Koinuma Appl. Phys. Lett. 85, 5586-5588
2004 Radiative and nonradiative excitonic transitions in nonpolar (11 0) and polar (000 ) and (0001) ZnO epilayers T. Koida, S. F. Chichibu,A. Uedon o, T. Sota, A. Tsukazaki and M. Kawasaki Appl. Phys. Lett. 84, 1079-1081
2003 Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO T. Koida, S. F. Chichibu,A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa and H. Koinuma Appl. Phys. Lett. 82, 532-534
2001 Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy S.F. Chichibu, A. Setoguchi, A. Uedono, K. Yoshimura and M. Sumiya Appl. Phys. Lett. 78, 28-30
1994 Defects introduced by Ar plasma exposure in GaAs probed by monoenergetic positron beam A. Uedono, T. Kawano, S. Tanigawa, K. Wada and H. Nakanishi Jpn. J. Appl. Phys. 33, L1374-L1377
1991 Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam A. Uedono, L. Wei, Y. Tabuki, H. Kondo, S. Tanigawa, K. Wada and H. Nakanishi Jpn. J. Appl. Phys. 30, L2002-L2005
1990 Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs A. Uedono and S. Tanigawa Jpn. J. Appl. Phys. 29, L346-L348
1988 Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron ) J.-L. Lee, J.S. Kim, H.M. Park, D.S. Ma, S. Tanigawa and A. Uedono Appl. Phys. Lett. 53, 1302-1304
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